CuSiN Barrier Layer for Resistive Memory Fatigue
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Solution Overview
Problem
The fatigue property of Cu-based resistive random access memory devices is compromised due to the high injection efficiency of Cu ions into the solid electrolyte material during programming and erasing, leading to low resistance state failure after multiple cycles.
Innovation Solution
A compound barrier layer formed by the chemical combination of Cu with Si and N or Ge and N is introduced between the copper electrode and the solid electrolyte material to reduce the injection efficiency of Cu ions, comprising a siliconization or germanidation treatment followed by a nitrogen treatment to create a CuSiN or CuGeN layer, which is deposited along with a solid electrolyte material and an upper electrode.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If Cu ions are injected into the solid electrolyte material during programming, then the resistance state changes from high to low, but the Cu ions accumulate in the solid electrolyte material after multiple programming and erasing cycles, causing low resistance state failure
Solution Approach 1:
A compound barrier layer (CuSiN or CuGeN) is introduced as an intermediary between the Cu electrode and the solid electrolyte material. This barrier layer selectively modulates the injection of Cu ions into the solid electrolyte during programming while preventing excessive accumulation during erasing cycles, thereby improving fatigue property without compromising the basic switching function
Solution Approach 2:
The compound barrier layer changes the injection efficiency parameter of Cu ions by forming a controlled chemical barrier. The layer allows sufficient ion injection for programming while limiting excessive accumulation during erasing, effectively adjusting the ion transport parameters to prevent low resistance state failure
2Reliability
If a compound barrier layer is introduced to reduce Cu ion injection efficiency, then the accumulation of Cu ions is reduced, but the programming and erasing functionality must be maintained
Solution Approach 1:
The compound barrier layer is applied locally only at the interface between the Cu electrode and the solid electrolyte material, rather than throughout the entire device structure. This localized modification reduces Cu ion accumulation at the critical interface while maintaining the overall simplicity of the device architecture
Solution Approach 2:
The barrier layer is formed as a compound material (CuSiN or CuGeN) through chemical combination of Cu with Si and N, or Cu with Ge and N. This composite structure provides the necessary barrier properties for reducing ion accumulation while maintaining compatibility with the existing device materials and processes
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The compound barrier layer effectively reduces the accumulation of Cu ions in the solid electrolyte material, enhancing the fatigue properties of the memory device by modulating ion injection efficiency and preventing oxidation, thereby improving reliability and reducing power consumption.
Implementation Method 1
performing composition and a chemical combination treatment on the lower copper electrode to generate a compound barrier layer
Implementation Method 2
Cu atoms are ionized by an electric field and then are injected into a solid electrolyte material
Implementation Method 3
Cu atoms are ionized by an electric field
Implementation Method 4
Cu atoms are ionized by an electric field and then are injected into a solid electrolyte material to be reduced to Cu atoms through the combination with electrons
Implementation Method 5
performing composition and a chemical combination treatment on the lower copper electrode to generate a compound barrier layer
Data Source
AI summary
The present invention discloses a preparation method of a Cu-based resistive random access memory, and a memory. The preparation method includes: forming a copper wire in a groove through a Damascus copper interconnection process, wherein the copper wire includes a lower copper electrode for growing a storage medium, and the copper wire is arranged above a first capping layer; forming a second capping layer above the copper wire; forming a hole at a position corresponding to the lower copper electrode on the second capping layer, wherein the pore is used for exposing the lower copper electrode; performing composition and a chemical combination treatment on the lower copper electrode to generate a compound barrier layer, wherein the compound barrier layer is a compound formed by the chemical combination of elements Cu, Si and N, or a compound formed by the chemical combination of elements Cu, Ge and N; and depositing a solid electrolyte material and an upper electrode on the compound barrier layer. By means of the above technical solution, the technical problem of higher injection efficiency of Cu ions in the Cu-based resistive random access memory in the prior art is solved, and the fatigue properties of the memory are improved.