Cylindrical Magnetic Memory with Spin Hall Effect

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Solution Overview

Problem

Current memory systems face challenges in efficiency, accuracy, and effectiveness, particularly in fabricating and operating magnetic memory devices, which require more advanced methods for data storage and logic operations.

Innovation Solution

The development of three-dimensional magnetic memory devices with cylindrical cores and annular magnetic layers, utilizing the Spin Hall Effect to switch magnetization and propagate magnetic instabilities, enabling efficient data storage and unidirectional propagation of magnetic bits.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Productivity

If conventional memory systems are used, then fabrication and operation simplicity is maintained, but efficiency and accuracy of data storage and logic operations deteriorate

Engineering Contradiction:

Improveefficiency of data storage and logic operationsVSAvoidcomplexity of magnetic memory device structure

Core Design Contradiction:

ProductivityVSDevice complexity

Solution Approach 1:

The patent transitions from conventional two-dimensional planar memory structures to three-dimensional vertically stacked magnetic tunnel junctions. Multiple magnetic layers are stacked vertically with alternating magnetization directions, enabling enhanced storage density and logic operation capabilities while maintaining fabrication feasibility through sequential deposition processes

Inventive Principle:

Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The magnetic memory device is segmented into multiple functional magnetic layers including reference layers, storage layers, and barrier layers, each with specific magnetization directions. This segmentation enables independent control of storage and logic functions while maintaining overall device integration

Inventive Principle:

Principle #1Segmentation

2Quantity of substance

If magnetic layers are increased to multiply areal density, then storage capacity is improved, but device fabrication complexity worsens

Engineering Contradiction:

Improvenumber of magnetic layersVSAvoidprecision of layer fabrication

Core Design Contradiction:

Quantity of substanceVSManufacturing precision

Solution Approach 1:

The patent employs parameter changes in layer thicknesses and material compositions to control magnetization directions and coupling strengths. By adjusting these parameters during fabrication, multiple magnetic layers can be precisely controlled without requiring excessive manufacturing precision, enabling scalable production

Inventive Principle:

Principle #35Parameter changes

3Speed

If spin-polarized current is used to switch magnetization, then switching speed is improved, but energy consumption worsens

Engineering Contradiction:

Improvemagnetization switching speedVSAvoidenergy consumption for magnetization switching

Core Design Contradiction:

SpeedVSUse of energy by moving object

Solution Approach 1:

The patent applies local quality by creating regions with different magnetization directions (parallel and anti-parallel) within the magnetic layers. This local differentiation enables selective switching of individual bits using spin-polarized current, achieving fast switching speeds while minimizing energy consumption by only affecting the targeted local region rather than the entire device

Inventive Principle:

Principle #3Local quality

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enhances the effectiveness and efficiency of magnetic memory systems by allowing for stable data storage and logic operations, improving user satisfaction through improved data propagation and storage density.

Implementation Method 1

a current source, coupled to the input terminal, that is configured to supply current imparting a Spin Hall Effect around the circumference of the cylindrical core

Methodology Applied

Scientific EffectSpin Hall Effect:

Implementation Method 2

Due to the spin-polarized electron tunneling effect, the electrical resistance of the cell changes due to the relative orientation of the magnetization of the two layers

Methodology Applied

Scientific EffectSpin-polarized electron tunneling:

Data Source

PatentUS10878870B2Defect propagation structure and mechanism for magnetic memory

Publication Date: 2020.12.29 INTEGRATED SILICON SOLUTION CAYMAN INC

AI summary

The various implementations described herein include magnetic memory devices and systems, and methods for propagating defects in the devices and systems. In one aspect, a magnetic memory device comprises a non-magnetic cylindrical core configured to receive a current, a plurality of magnetic layers surrounding the core, and a plurality of non-magnetic layers also surrounding the core. The magnetic layers and the non-magnetic layers are arranged in a stack coaxial with the core. Respective magnetic layers of the plurality of magnetic layers are separated by respective non-magnetic layers of the plurality of non-magnetic layers. The device further comprises an input terminal coupled to a first end of the core and a current source coupled to the input terminal. The current source is configured to supply current imparting a Spin Hall Effect (SHE) around the circumference of the core, and the SHE contributes to a magnetization of the magnetic layers.