Dual Cylindrical Sputtering Targets for Organic-Safe Wide Electrodes
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Solution Overview
Problem
Existing sputtering technologies face challenges in preventing damage to lower organic layers, optimizing the use efficiency of deposition materials, and easily forming wide metal thin film electrodes for large-sized display devices during the deposition process.
Innovation Solution
A sputtering apparatus and method utilizing two cylindrical targets with magnets positioned in a specific angle range relative to the substrate holder, allowing for controlled plasma generation and particle deposition to prevent organic layer damage and enhance material efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional sputtering methods are used to deposit metal thin film electrodes directly on organic layers, then the deposition process can be simplified, but the organic layer may be damaged by high-energy particle bombardment
Solution Approach 1:
The patent introduces a low-temperature plasma field as an intermediary between the sputtering source and the organic layer. This plasma field acts as a buffer that reduces the energy of incident particles before they reach the organic layer, preventing damage while still enabling effective metal film deposition. The plasma field mediates the interaction between the high-energy sputtering process and the sensitive organic layer.
2Device complexity
If traditional sputtering targets are used, then the equipment structure can be kept simple, but the use efficiency of deposition material is reduced
Solution Approach 1:
The patent employs rotatable cylindrical targets that can rotate during the sputtering process. This dynamic configuration allows different portions of the target surface to be utilized sequentially, significantly increasing the effective use area of the deposition material. The rotation mechanism ensures uniform material consumption across the target surface, improving material efficiency without requiring complex multi-target systems.
3Device complexity
If conventional sputtering apparatus are used, then the device structure can be kept simple, but forming wide metal thin film electrodes for large-sized display devices becomes difficult
Solution Approach 1:
The patent transitions from conventional planar targets to three-dimensional cylindrical targets that rotate during deposition. This dimensional change allows the deposition area to expand in multiple directions simultaneously. The cylindrical geometry combined with rotation enables coverage of large substrate areas while maintaining a relatively simple apparatus structure, effectively solving the limitation of forming wide electrodes for large display devices.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively prevents damage to lower organic layers, increases the use efficiency of deposition materials, and facilitates the easy formation of wide metal thin film electrodes for large-sized display devices, improving the overall deposition process.
Implementation Method 1
a first magnet disposed in the first cylindrical target; a second magnet disposed in the second cylindrical target
Implementation Method 2
The sputtering is a method in which gas ions accelerated by electrical energy is allowed to collide with a target, which is a deposition material, in a vacuum state to deposit the emitted target particles on a deposition target such as a substrate
Implementation Method 3
gas ions accelerated by electrical energy
Data Source
AI summary
A sputtering apparatus includes: a first cylindrical target and a second cylindrical target, which are arranged in a first direction and parallel to each other; a first magnet disposed in the first cylindrical target; a second magnet disposed in the second cylindrical target; and a substrate holder spaced apart from the first and second cylindrical targets in a second direction which is perpendicular to the first direction, wherein each of a first angle formed by a first imaginary straight line from a center of the first magnet to a cylindrical axis of the first cylindrical target with a first perpendicular line and a second angle formed by a second imaginary straight line from a center to of the second magnet to a cylindrical axis of the second cylindrical target with a second perpendicular line is in a range of about 30 degrees to about 180 degrees.