Electric Discharge Tubes TRIZ Cases

Directional coolant control in an electrostatic chuck shifts wafer temperature by etch stage to keep high etch rates while improving selectivity and CD uniformity.

A positive kick pulse after the main sputtering pulse controls ion flux and energy, raising deposition rate while reducing film stress.

Symmetric arc-surface electrodes create a stable discharge zone that boosts methane-to-olefins conversion while avoiding CO2 and carbon deposition.

A tool-engaging insulating sleeve breaks the corroded adhesion layer by rotation, enabling removal without damaging the ceramic or base plate.

Loop-assisted graphene transfer removes polymer support films, reducing contamination and stress in thin film liquid cells for TEM imaging.

Angled dual cylindrical targets shape plasma to protect lower organic layers, improve material use, and form wide thin-film electrodes.

Variable-frequency RF plasma enables low-temperature PEALD of amorphous TiN spacer films with lower impurities and less sublayer damage.

An interfacial layer couples the collector to cooling, preserves electrode spacing, and manages cesium to improve thermionic conversion.

Pre-assembled purge modules, filters, and multi-point outlets improve gas coverage in substrate containers while reducing contamination risk.

In-vacuum plasma nitridation removes contamination before dielectric deposition, limiting re-oxidation and improving HEMT passivation quality.

External opening and closing members regulate exhaust pressure in plasma substrate treatment while reducing byproduct buildup and structural complexity.

A two-mode condenser lens forms a beam crossover to raise probe current for voltage-contrast inspection while preserving imaging resolution.

Integrated distance sensors and charged particle optics improve surface positioning accuracy in tight spaces while reducing calibration needs.

Segmented coils along the beam axis create an elongated compensation volume that suppresses magnetic interference for higher-resolution electron microscopy.

Limiting portions keep the susceptor and rotating tube concentric during MOCVD rotation, improving heating uniformity and substrate temperature control.

Elastic deformation in the mounting connection relieves thermal expansion mismatch between a plasma shower head and mount base for stable high-temperature etching.

Isofocal dose measurements on variable-width test patterns separate electron-resist interactions from processing effects for faster PSF fitting.

Fluorinated fluids with tailored halogenated structures deliver non-flammable, low-GWP heat transfer and dielectric performance for immersion cooling.

Converters on a multi-aperture plate turn backscattered electrons into lower-energy signals, improving material contrast in multi-beam imaging.

An electromechanical detector mount switches between EBSD and TKD inside the vacuum chamber, avoiding venting and reducing setup time.

After plasma coating, a sterilization medium atmosphere in the container interior helps limit oxygen ingress and carbon dioxide loss before filling.

Segmented antenna sections with capacitive loads stabilize large-area plasma induction, lower peak voltage, and reduce heat damage.

A sidewall ground mesh inside the substrate support creates a more stable RF return path, cutting parasitic plasma and power loss.

Ferrite around the discharge tube adds inductance to suppress parasitic plasma, enabling in-chamber film treatment with better fill quality and throughput.

Integrated ceiling-wall gas holes and a recessed wave port remove protruding nozzles, simplifying plasma tool manufacture and maintenance.

Adjusting gas dispenser and edge ring spacing helps maintain uniform plasma and reduce over-etching across large semiconductor wafers.

Controlled compressive stress in a rare-earth plasma-facing film limits delamination, microcracks, and particle contamination under thermal cycling.

High-temperature plasma ALD followed by hotter annealing improves silicon oxide film uniformity, density, and wet etch resistance.

A three-stage MOSFET pulser creates multilevel bias micropulses to tune IEDF for better etch selectivity, uniformity, and throughput.

A conductive shower plate protrusion strengthens microwave plasma ignition, boosting radical generation for low-temperature ALD with less film damage.

Parallel row switches isolate current in a matrix heater support unit, enabling accurate target-heater measurement and tighter substrate temperature control.

A liftable edge ring creates an etchant flow gap that prevents backside residue and improves wafer etching uniformity.

Nested induction coils and microwave plasma generation isolate the power source from electrical feedback while maintaining efficient energy transfer.

Hydrogen-oxygen plasma modifies metal and silicon-containing films to enlarge crystal grains and lower electrode sheet resistance.

An adhesive layer replaces high-temperature ceramic fusion, cutting process complexity while improving plasma resistance and wafer holding.

Dynamic SEM scan and image processing control matches storage and server state to prevent scan stops and long defect inspection delays.

A thermoelectric element harvests the fluid temperature difference in a plasma chamber to recover waste heat and offset chiller power use.

Precise pressure sensing and 0.5-1.5 L/min cyclone gas control keep the tray and wafer rotating together under 1-20 Torr heat treatment.

A two-stage heat and electric field sequence restores Schottky emitter facet shape faster and stabilizes emission current without extra hardware.

A separate pumping duct tunes plasma gas residence time without disturbing ion extraction, improving radical production and beam uniformity.

Synchronized electron-beam deflection and compliant nano stage motion enable stitching-free large-area nanofabrication with in-situ inspection.

A switchable RF network with dynamic frequency tuning matches changing plasma load impedance for faster power steps and lower overshoot.

Partial plasma treatment with negative pressure improves cannula adhesion in coated glass syringes without sacrificing sliding performance.

A two-step gas process forms and then dissociates Si-Si-Si bonds to tune Si-Si bond levels and improve film charge trap characteristics.

A ceramic-embedded split-ring resonator generates sealed microplasma at high pressure, reducing electrode erosion and contamination in gas monitoring.

A porous ceramic gas-feed path suppresses arc discharge in electrostatic chucks while preserving helium flow for stable substrate temperature control.

Different-width gate valves and a shared transfer mechanism let substrates and annular members move accurately across attached modules without redesigning the vacuum transfer module.

Continuous A/B nozzle pairs and ECR hollow cathode plasma enable roll-to-roll ALD films without purge cycles or direct plasma damage.

A layered conductor-dielectric harvester uses thermal energy and quantum tunneling to provide autonomous PCB power without batteries.

A movable pressure member shifts the electrode horizontally to apply uniform surface pressure, improving all-solid-state battery imaging accuracy.