Adhesive-Bonded Electrostatic Chuck Ceramic Stack for Plasma Resistance
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Solution Overview
Problem
Existing electrostatic chucks require complex high-temperature fusion processes to stack ceramic base bodies, which is inefficient and requires surface activation treatments to achieve small surface roughness.
Innovation Solution
A simple method of stacking two ceramic base bodies with a first base body made of aluminum oxide ceramics and a second base body with higher purity aluminum oxide, using an adhesive layer and an embedded electrostatic electrode, allowing for curing at a lower temperature without the need for high-temperature fusion or surface activation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Strength
If high-temperature fusion is used to stack ceramic base bodies, then bonding strength is improved, but manufacturing complexity and cost increase
Solution Approach 1:
The invention changes the bonding method from high-temperature fusion to adhesive bonding, fundamentally altering the process parameters. This allows stacking at lower temperatures while achieving sufficient bonding strength through chemical adhesion rather than thermal fusion, thereby reducing manufacturing complexity without sacrificing bond strength
Solution Approach 2:
The invention introduces an adhesive layer as an intermediary substance between the first and second base bodies. This adhesive mediator enables bonding at lower temperatures by providing a chemical bonding interface, eliminating the need for high-temperature fusion processes and reducing manufacturing complexity while maintaining bonding strength
2Strength
If high-temperature fusion is used to stack ceramic base bodies, then bonding strength is improved, but processing time and energy consumption increase
Solution Approach 1:
The invention changes the bonding temperature parameter from high-temperature fusion to low-temperature adhesive curing. This parameter change dramatically reduces processing time and energy consumption while achieving adequate bonding strength through the adhesive's chemical bonding mechanism rather than thermal fusion
Solution Approach 2:
The adhesive layer acts as a mediator that enables bonding at lower temperatures, thereby reducing the thermal energy input required and shortening the processing time. The adhesive cures at lower temperatures compared to fusion, eliminating the need for prolonged high-temperature exposure
3Reliability
If high-purity aluminum oxide is used for the second base body, then plasma resistance is improved, but material cost increases
Solution Approach 1:
The invention applies local quality by using high-purity aluminum oxide specifically for the second base body that contacts the wafer and is exposed to plasma, while the first base body can use lower purity material. This targeted approach provides plasma resistance where needed without unnecessarily increasing material cost throughout the entire structure
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables efficient and cost-effective stacking of ceramic base bodies while improving plasma resistance and reducing the risk of peeling or cracking, without the need for expensive processing like HIP, and effectively holding wafers during semiconductor manufacturing.
Implementation Method 1
a first adhesive layer; a second base body stacked on the first base body with the first adhesive layer interposed therebetween
Implementation Method 2
an electrostatic electrode embedded in the second base body
Data Source
AI summary
An electrostatic chuck includes a first base body, a first adhesive layer, a second base body stacked on the first base body with the first adhesive layer interposed therebetween, and an electrostatic electrode embedded in the second base body. The first base body is made of aluminum oxide ceramics. The second base body is made of aluminum oxide ceramics with a higher purity of aluminum oxide than that of the first base body.


