Silicon Oxide Film Deposition with High-Temperature Plasma ALD
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Solution Overview
Problem
Existing film deposition methods struggle to achieve uniform film quality for silicon oxide films, particularly when compared to thermal oxide films, due to limitations in temperature control and plasma processing.
Innovation Solution
A method combining high-temperature plasma modification with annealing for depositing silicon oxide films using Atomic Layer Deposition (ALD) while heating the substrate to 600° C. or higher, followed by annealing at a higher temperature.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If plasma is used to deposit silicon oxide film at low temperature (around 400°C), then the deposition process can be performed, but the film quality is not uniform and cannot achieve thermal oxide film quality
Solution Approach 1:
The patent changes the substrate temperature parameter from conventional low temperature (400°C) to high temperature (600°C or higher) during plasma ALD process. This parameter change enables the deposition of silicon oxide films with uniform quality equivalent to thermal oxide films, resolving the contradiction between achieving good film quality and maintaining low processing temperature.
2Manufacturing precision
If high temperature (600°C or higher) is used during plasma deposition, then uniform film quality equivalent to thermal oxide is achieved, but the process becomes more complex requiring both deposition and separate annealing
Solution Approach 1:
The patent combines the deposition process and quality improvement function into a single high-temperature plasma ALD step. By performing deposition at 600°C or higher, the process simultaneously achieves both film formation and quality enhancement, eliminating the need for separate annealing equipment and reducing overall process complexity despite the higher deposition temperature.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach results in silicon oxide films with uniform quality equivalent to thermal oxide films, as evidenced by improved film density and reduced wet etch rates.
Implementation Method 1
plasma is used to form a hydroxyl group
Implementation Method 2
heating the substrate to a first temperature of 600° C. or higher
Implementation Method 3
The silicon oxide film is annealed at a second temperature higher than the first temperature
Data Source
AI summary
A method for depositing a silicon oxide film is provided. In the method, a silicon oxide film is deposited on a substrate by Atomic Layer Deposition with plasma while heating the substrate to a first temperature of 600° C. or higher. The silicon oxide film is annealed at a second temperature higher than the first temperature after completing the depositing the silicon oxide film.