HTCC Split-Ring Antenna for High-Pressure Microplasma Sensing
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Solution Overview
Problem
Current Self Plasma-OES sensors face challenges in operating at high pressures, experiencing electrode erosion, contamination risks, and slow response times due to design limitations, which hinder their effectiveness in monitoring semiconductor processing tools.
Innovation Solution
A plasma generation device featuring a split-ring resonator microstrip embedded in a ceramic dielectric matrix, with a refractory metal conductor and hermetic sealing, allows for efficient plasma generation and light collection, enabling operation at high pressures while minimizing contamination and enhancing response times.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If conventional Self Plasma-OES sensors are used to monitor process gases, then plasma emission spectroscopy can be performed, but electrode erosion occurs and contamination risks increase
Solution Approach 1:
The patent replaces conventional electrode-based plasma generation with a dielectric barrier discharge (DBD) system. Two transparent electrodes separated by a dielectric barrier generate plasma without direct contact between electrodes and process gas, eliminating electrode erosion and contamination while maintaining plasma emission spectroscopy capability for gas composition measurement
Solution Approach 2:
The dielectric barrier material acts as an intermediary between the electrodes and the process gas. This intermediate layer prevents direct interaction between electrodes and gas, eliminating erosion and contamination while still allowing plasma generation and light emission for spectroscopic analysis
2Measurement precision
If mass spectrometry is used to monitor gases and leaks, then accurate detection is achieved, but additional pumping is required which slows response time
Solution Approach 1:
The sensor system is self-contained, generating its own plasma source within the process chamber without requiring external pumping systems. The DBD plasma generator creates plasma directly in the process gas environment, enabling immediate analysis and eliminating the time delay associated with vacuum pumping and sample transport required by mass spectrometry
3Reliability
If plasma source is positioned away from process chamber to protect from contamination, then plasma generation is maintained, but gas analysis capability is lost
Solution Approach 1:
The patent uses dielectric barrier discharge technology that allows the plasma source to be positioned directly within the process chamber. The transparent electrodes and dielectric barrier configuration enables plasma generation in direct contact with process gases without risk of contamination, combining both protection and analysis capabilities in a single integrated system
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides a robust and efficient plasma generation system that can operate at high pressures, reduce contamination risks, and quickly respond to gas changes, improving the monitoring capabilities of semiconductor processing tools.
Implementation Method 1
a split-ring resonator microstrip comprising a split-ring conductor and a ceramic dielectric matrix configured to surround and support the split-ring resonator microstrip
Implementation Method 2
configured to generate plasma
Data Source
AI summary
A plasma generation device for generating a plasma comprises a support having a first side and an opposing second side. The support is comprised of a ceramic matrix and a split-ring conductor is embedded in the ceramic matrix. A hermetically sealed via extends from the split-ring conductor to the second side of the support and connects to an electrical supply. A ground plane is formed on the second side of the support. A plasma is generated proximate to the first side of the support, and the support seals to a wall of the chamber such that the first side is exposed to the one or more gases inside the chamber and the second side is isolated from the plasma and the one or more gases inside of the chamber.