Liftable Edge Ring Structure for Uniform Wafer Etching

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Solution Overview

Problem

As semiconductor devices continue to integrate more components into smaller areas, the etching process faces challenges in achieving uniformity and residue formation on the back surface of the edge ring during the etching of semiconductor wafers.

Innovation Solution

An etching system with an edge ring that lifts during the process, creating a gap for etchant flow and preventing residue formation, utilizing a substrate support and edge ring assembly with a top ring lifted to allow etchant passage, ensuring uniformity and preventing material deposition on the edge ring surface.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Object-generated harmful factors

If the edge ring remains stationary during etching, then the structural simplicity is maintained, but residue formation occurs on the back surface of the edge ring

Engineering Contradiction:
Improveresidue formation on edge ringVSAvoidedge ring structure
Core Design Contradiction:
Object-generated harmful factorsVSDevice complexity

Solution Approach 1:

The edge ring is designed with a lift mechanism that allows it to transition from a stationary position to a lifted position during the etching process. This dynamic adjustment creates a gap between the edge ring and the substrate support, enabling etchant flow underneath to prevent residue formation while maintaining structural simplicity when not in use

Inventive Principle:
Principle #15Dynamics

2Object-generated harmful factors

If the top ring is lifted to create a gap for etchant flow, then residue formation is prevented, but the device complexity increases

Engineering Contradiction:
Improvematerial deposition on edge ringVSAvoidedge ring assembly
Core Design Contradiction:
Object-generated harmful factorsVSDevice complexity

Solution Approach 1:

The top ring incorporates a lift mechanism that enables controlled vertical movement to create a gap for etchant passage. This dynamic feature prevents material deposition on the edge ring surface while the mechanism remains integrated within the existing assembly structure, minimizing additional complexity

Inventive Principle:
Principle #15Dynamics

Solution Approach 2:

The lift mechanism acts as an intermediary component between the top ring and the substrate support, mediating the gap creation process. This intermediary structure enables etchant flow control without requiring complete redesign of the edge ring assembly

Inventive Principle:
Principle #24Intermediary (Mediator)

3Productivity

If minimum feature size is reduced to increase integration density, then more components can be integrated, but etching uniformity becomes more difficult to achieve

Engineering Contradiction:
Improveintegration densityVSAvoidetching uniformity
Core Design Contradiction:
ProductivityVSManufacturing precision

Solution Approach 1:

By dynamically lifting the edge ring during etching, the system maintains consistent etchant flow and pressure distribution across the substrate surface. This dynamic adjustment compensates for the challenges of etching smaller features, ensuring uniform etching results even as minimum feature sizes are reduced to increase integration density

Inventive Principle:
Principle #15Dynamics

Data Source

PatentUS20250022690A1Ring of an edge ring assembly for an etching system
Publication Date: 2025.01.16 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
  • US20250022690A1 patent drawing
  • US20250022690A1 patent drawing
  • US20250022690A1 patent drawing

AI summary

A ring of an edge ring assembly for an etching system and methods of using the ring are described. In some embodiments, the ring includes a top portion including a side surface defining an opening sized to receive a center portion of a substrate support supporting a semiconductor wafer, and the top portion has a first constant thickness. The ring further includes a bottom portion integrally connected to the top portion, and the bottom portion has a second constant thickness that is about 15 percent to about 115 percent of the first constant thickness.