Compliant Nano Servo Lithography for Stitching-Free Large-Area Writing

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Solution Overview

Problem

Conventional electron beam lithography systems face challenges in achieving large-area nanoscale precision fabrication due to limited writing fields, high fabrication costs, in-situ measurement limitations, and stitching errors between fields.

Innovation Solution

A scanning electron microscopic direct-write lithography system based on a compliant nano servo motion system, which includes an electron chamber, an ion chamber, and a control system, enabling synchronized electron/ion beam and nanoscale-precision compliant servo motion stage operations for non-stitching direct-write nanofabrication and in-situ inspection.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If conventional electron beam lithography uses a limited writing field with manual or stepper motor specimen movement, then fabrication linewidth can reach several nanometers, but stitching errors occur between different writing fields and large-area fabrication is difficult

Engineering Contradiction:
Improvefabrication linewidthVSAvoidstitching error
Core Design Contradiction:
Manufacturing precisionVSReliability

Solution Approach 1:

The patent merges the electron beam deflection system with a nanoscale-precision compliant servo motion stage system that synchronously moves the specimen. This combination allows the writing field to be effectively extended across large areas while maintaining nanoscale precision and eliminating stitching errors through coordinated beam-specimen motion

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The patent replaces conventional manual or stepper motor specimen movement with a nanoscale-precision compliant servo motion stage system driven by voice coil motors. This substitution enables precise, programmable specimen positioning that synchronizes with electron beam deflection, eliminating the stitching errors inherent in traditional mechanical positioning methods

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

2Manufacturing precision

If conventional electron beam lithography uses a small writing field, then fabrication linewidth can reach several nanometers, but large-area fabrication is difficult to realize

Engineering Contradiction:
Improvefabrication linewidthVSAvoidwriting field area
Core Design Contradiction:
Manufacturing precisionVSArea of stationary object

Solution Approach 1:

The patent combines electron beam deflection with nanoscale-precision compliant servo motion stage system that synchronously moves the specimen. This merging effectively extends the writing field area from limited microscopic scales to large areas while maintaining nanoscale fabrication precision throughout the extended field

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The patent introduces dynamic synchronization between electron beam deflection and specimen motion. The compliant servo motion stage system responds dynamically to beam position commands, enabling the writing field to expand continuously across large areas while maintaining precision through real-time coordinated motion control

Inventive Principle:
Principle #15Dynamics

3Manufacturing precision

If conventional electron beam lithography uses a small writing field with sequential field fabrication, then fabrication linewidth can reach several nanometers, but productivity decreases due to multiple positioning operations

Engineering Contradiction:
Improvefabrication linewidthVSAvoidfabrication efficiency
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

The patent merges electron beam deflection with nanoscale-precision compliant servo motion stage system operation, enabling continuous large-area fabrication without the need for repeated positioning operations. This integration dramatically improves productivity while maintaining nanoscale precision across the entire fabricated area

Inventive Principle:
Principle #5Merging (Combining)

4Manufacturing precision

If conventional electron beam lithography uses a lithography mask to shield electron beams, then accuracy of lithography is effectively improved, but fabrication cost increases

Engineering Contradiction:
Improvelithography accuracyVSAvoidfabrication cost
Core Design Contradiction:
Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The patent extracts and eliminates the lithography mask from the system by using direct electron beam writing with nanoscale-precision compliant servo motion stage system control. This removal of the mask component reduces fabrication cost while maintaining high accuracy through programmable beam positioning and synchronized specimen motion

Inventive Principle:
Principle #2Taking out (Extraction)

5Device complexity

If conventional electron beam lithography lacks in-situ measurement capability, then fabrication process is simpler, but real-time inspection and verification are not available

Engineering Contradiction:
Improvesystem simplicityVSAvoidin-situ measurement capability
Core Design Contradiction:
Device complexityVSMeasurement precision

Solution Approach 1:

The patent integrates multiple functions into the electron beam system: fabrication writing, in-situ inspection, and measurement verification. The same electron beam and nanoscale-precision compliant servo motion stage system used for fabrication also perform real-time inspection and measurement, enabling comprehensive process control without adding separate complex measurement equipment

Inventive Principle:
Principle #6Universality (Multi-functionality)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables stitching-error-free large-area nano direct-write lithographic fabrication and real-time inspection, facilitating precise and cost-effective nanoscale pattern creation across extended areas.

Implementation Method 1

the electron beam deflection coil energized with electric current deflects an electron beam generated by the electron gun to perform a scan

Methodology Applied
Scientific EffectElectromagnetic deflection: Lorentz Force

Implementation Method 2

the ion beam-scanning deflection electrode energized with electric current deflects an ion beam generated by the ion source to perform a scan

Methodology Applied
Scientific EffectElectric field deflection: Lorentz Force

Implementation Method 3

the nanoscale-precision compliant servo motion stage system drives the specimen to perform a motion

Methodology Applied
Scientific EffectVoice coil motor actuation: Lorentz Force

Implementation Method 4

electrons reflected from the surface of the specimen are configured to be detected by the secondary electron detector and form an image on the computer

Methodology Applied
Scientific EffectElectron detection: Photoelectric Effect

Data Source

PatentUS20250021014A1Scanning electron microscopic direct-write lithography system based on a compliant NANO servo motion system
Publication Date: 2025.01.16 TSINGHUA UNIVERSITY
  • US20250021014A1 patent drawing
  • US20250021014A1 patent drawing
  • US20250021014A1 patent drawing

AI summary

The present application discloses a scanning electron microscopic direct-write lithography system based on a compliant nano servo motion system, which includes an electron chamber, an ion chamber, a specimen chamber and a control system, wherein the electron chamber includes an electron chamber housing, an electron gun, an anode, an electron beam blanker, an electromagnetic lens and an electron beam deflection coil, the ion chamber includes an ion chamber housing, an ion source, an ion beam-scanning deflection electrode and the like, the specimen chamber includes a specimen chamber housing, a secondary electron detector, a nanoscale-precision compliant servo motion stage system and the like; control system includes a computer, an electron beam scanning controller, an ion beam scanning controller and the like.