Redistribution Layer Dam Structure for Crack-Resistant Die Packaging

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Solution Overview

Problem

Existing semiconductor package structures face issues with thermal expansion mismatch, leading to stress and potential cracking due to the mismatch between different materials, which can cause failure.

Innovation Solution

A semiconductor package structure is designed with a dam structure embedded in a redistribution layer between semiconductor dies, reducing stress and enhancing the strength between the dies, and this structure is integrated with the formation of the redistribution layer, minimizing additional processing steps.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If different materials are used in semiconductor package structure, then functional requirements are met, but thermal expansion mismatch introduces stress and may cause cracks

Engineering Contradiction:
Improvematerial compatibilityVSAvoidcrack resistance
Core Design Contradiction:
Adaptability or versatilityVSReliability

Solution Approach 1:

The patent divides the semiconductor package structure into multiple layers including a substrate, semiconductor die, and overmold structure. This segmentation allows each layer to be optimized for its specific material properties and thermal expansion characteristics, reducing overall stress while maintaining functional versatility across different material combinations.

Inventive Principle:
Principle #1Segmentation

2Reliability

If a dam structure is added to reduce stress between semiconductor dies, then reliability is improved, but device complexity increases

Engineering Contradiction:
Improvestress resistanceVSAvoidstructure complexity
Core Design Contradiction:
ReliabilityVSDevice complexity

Solution Approach 1:

The patent merges the dam structure with the overmold structure by forming the overmold material to extend around the semiconductor die and contact the dam structure. This integration combines two functional elements into a unified structure, reducing overall device complexity while maintaining stress resistance and reliability benefits.

Inventive Principle:
Principle #5Merging (Combining)

Solution Approach 2:

The overmold structure serves as an intermediary element that connects the semiconductor die to the dam structure. This intermediate layer provides a transition zone that facilitates stress distribution and reduces the complexity of direct connections between rigid components.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Manufacturing precision

If additional processing steps are added to create the dam structure, then manufacturing precision is improved, but productivity decreases

Engineering Contradiction:
Improvestructural precisionVSAvoidproduction efficiency
Core Design Contradiction:
Manufacturing precisionVSProductivity

Solution Approach 1:

The patent performs preliminary actions by forming the dam structure within the overmold material during the molding process itself, rather than as a separate post-processing step. This preliminary integration of the dam structure creation into the existing molding operation maintains manufacturing precision while avoiding additional processing steps that would reduce productivity.

Inventive Principle:
Principle #10Preliminary action

Data Source

PatentUS20240387347A1Semiconductor package structure
Publication Date: 2024.11.21 MEDIATEK INC
  • US20240387347A1 patent drawing
  • US20240387347A1 patent drawing
  • US20240387347A1 patent drawing

AI summary

A semiconductor package structure includes a redistribution layer, a first semiconductor die, a second semiconductor die, a molding material, and a dam structure. The redistribution layer has a first surface and a second surface opposite the first surface. The first semiconductor die and the second semiconductor die are disposed over the first surface of the redistribution layer. The molding material is arranged between the first semiconductor die and the second semiconductor die. The dam structure is disposed in the redistribution layer. The dam structure is arranged under the molding material between the first semiconductor die and the second semiconductor die.