Data Latch Circuit Common Gate Configuration for Area Reduction
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Solution Overview
Problem
The increasing integration of memory cells in semiconductor memory devices leads to a larger surface area requirement for data latch circuits connected to sense amplifiers, which is undesirable for maintaining data transfer rates.
Innovation Solution
A data latch circuit design that includes a common gate configuration for p-channel and n-channel transistors, allowing for reduced gate count and downsizing of the data latch circuit, enabling more efficient use of space and maintaining data transfer rates.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If the number of data latch circuits connected to each sense amplifier is increased to maintain data transfer rate, then data transfer rate is maintained, but surface area increases
Solution Approach 1:
The patent combines a p-channel transistor and an n-channel transistor to share a common gate structure. This merging of gate functions reduces the total number of separate gate components needed, thereby decreasing the surface area occupied by each data latch circuit while maintaining the required functionality for data transfer
Solution Approach 2:
The common gate structure serves multiple functions simultaneously - it acts as the gate for both the p-channel transistor and the n-channel transistor. This multi-functionality allows the same physical structure to control two different transistors, reducing component count and surface area while maintaining data latch circuit performance
Data Source
AI summary
A data latch circuit includes a first n-channel transistor and a first p-channel transistor. A gate of the first n-channel transistor and a gate of the first p-channel transistor are a common gate.