Electro-Optical Device Data Line Light Shielding
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Solution Overview
Problem
The complexity of the laminated structure on substrates in electro-optical devices complicates manufacturing processes, leading to reduced production yield and potential deterioration in display quality due to light-shielding and parasitic capacitance issues.
Innovation Solution
A simplified laminated structure is achieved by incorporating conductive light-shielding films in storage capacitors and data lines, which reduces light leak current and electrical interference, while maintaining high-quality display performance through strategic placement and interlayer insulating films.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Object-affected harmful factors
If a light-shielding layer is provided around the semiconductor layer of a TFT to prevent light leak current, then display quality is improved, but the laminated structure becomes complicated and manufacturing complexity increases
Solution Approach 1:
The invention merges the light-shielding function with the data line structure by forming the data line to extend over the semiconductor layer. The data line itself serves as the light-shielding layer, eliminating the need for a separate light-shielding structure. This integration maintains effective light blocking while simplifying the laminated structure and reducing manufacturing complexity.
Solution Approach 2:
The data line is designed to perform multiple functions: it serves as both the electrical connection element and the light-shielding layer. By making the data line extend over the semiconductor layer, it simultaneously provides electrical connectivity and prevents light-induced degradation, thereby reducing the number of separate components needed.
2Area of stationary object
If circuit elements are provided in high density to reduce device size, then aperture ratio is improved, but parasitic capacitance increases causing image signal deterioration
Solution Approach 1:
The invention applies local quality by positioning the storage capacitor at a specific location where it can effectively reduce parasitic capacitance effects. The capacitor is placed to be electrically connected to the pixel electrode while being spatially separated from the TFT channel region, creating a localized solution that addresses the parasitic capacitance issue without requiring overall device expansion.
3Productivity
If the laminated structure is simplified to improve manufacturing yield, then production efficiency increases, but light-shielding performance may deteriorate
Solution Approach 1:
The invention merges the light-shielding function with the data line structure by forming the data line to extend over the semiconductor layer. The data line itself serves as the light-shielding layer, eliminating the need for a separate light-shielding structure. This integration maintains effective light blocking while simplifying the laminated structure and reducing manufacturing complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach simplifies the manufacturing process, enhances the yield, and improves display quality by effectively shielding the channel region of TFTs from light and preventing electrical interference between pixel electrodes.
Implementation Method 1
at least one of the fixed-potential-side electrode and the pixel-potential-side electrode has a first conductive light-shielding film
Data Source
AI summary
An electro-optical device including a substrate, data lines and scanning lines, thin film transistors being disposed below the data lines and above the substrate. Storage capacitors are disposed over the data lines in a region opposite to the channel region of the thin film transistors in plan view. Each storage capacitor has a pixel-potential-side electrode, a dielectric film, and a fixed-potential-side electrode that have been formed sequentially. The pixel electrodes are disposed over the storage capacitors so as to correspond to the data lines and the scanning lines on the substrate in plan view, and the pixel electrodes are electrically connected to the pixel-potential-side electrodes and the thin film transistors. This abstract is intended only to aid those searching patents, and is not intended to be used to interpret or limit the scope or meaning of the claims in any manner.