Dielectric Barrier Discharge Apparatus for High-Density Radical Gas Generation
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Solution Overview
Problem
Existing methods for generating ions and radical gases, such as PECVD and thermal CVD, face challenges like plasma damage to semiconductors, slow film forming speeds, high costs due to expensive light sources, and difficulty in effectively utilizing short-lived radical gases at high densities.
Innovation Solution
An apparatus generating dielectric-barrier discharge gas using a flat-plate-like electrodes with a dielectric body and AC power source, creating a high-electric-field discharge space that efficiently produces high-energy radical gases, which are then supplied to a treatment surface.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If high-frequency plasma or low-pressure glow discharge is used to generate radical gases, then large amounts of ion gas and radical gas species can be brought into contact with the substance to be treated, but plasma damage occurs to the semiconductor surface
Solution Approach 1:
The invention divides the discharge process into two separate spatial zones: a discharge region where radical gases are generated at high density, and a treatment region where the substrate is exposed only to the radical gases without direct plasma contact. This segmentation allows the benefits of high radical gas concentration while avoiding the harmful effects of plasma damage to the semiconductor surface.
Solution Approach 2:
The invention uses an intermediary mechanism where radical gases act as mediators between the plasma discharge and the substrate. The discharge occurs in a separate region, generating radical gases that then diffuse or flow to the substrate surface, eliminating direct plasma-substrate contact while maintaining effective radical gas exposure for film formation.
2Productivity
If direct plasma discharge is applied to the substrate surface, then high film forming speeds and large film thicknesses can be obtained, but the semiconductor surface is electrically charged and ion conduction occurs causing metal particle migration
Solution Approach 1:
The invention segments the processing system into a discharge chamber for plasma generation and a treatment chamber for substrate exposure. This spatial separation enables high-speed film formation through abundant radical gas supply while preventing ion conduction and metal particle migration by eliminating direct plasma-substrate contact.
Solution Approach 2:
The invention extracts the harmful ion component from the plasma discharge by conducting the discharge in a separate region. Only the beneficial radical gas species are allowed to contact the substrate, achieving high film forming speeds without the detrimental effects of ion charging and metal particle contamination.
3Object-affected harmful factors
If optical CVD or thermal CVD is used to generate radical gases, then plasma damage is avoided, but film forming speeds are slow
Solution Approach 1:
The invention merges the advantages of plasma discharge (high radical gas generation efficiency) with the advantages of optical/thermal CVD (no direct plasma damage). By conducting discharge in a separate region and allowing only radical gases to contact the substrate, the system achieves both high film forming speeds and avoidance of plasma damage.
Solution Approach 2:
The invention changes the spatial parameters of the discharge process, separating the discharge location from the substrate position. This parameter change allows the use of high-power plasma discharge for efficient radical gas generation while controlling the exposure parameters at the substrate to prevent plasma damage, thereby achieving high productivity without harmful effects.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the generation of high-energy radical gases at high densities and efficiencies, reducing plasma damage and increasing film forming speeds while maintaining film quality, and allows for cost-effective production with reduced plasma exposure.
Implementation Method 1
causes a dielectric-barrier discharge (a silent discharge) to be generated via a dielectric body by applying an AC voltage across a high-voltage electrode and a low-voltage electrode, thereby making it possible to effectively take out a radical gas (an excitation gas) generated by a discharge in a high electric field
Data Source
AI summary
An apparatus for generating a dielectric-barrier discharge gas including a high-energy radical gas, at a high density and with high efficiency. A flat-plate-like first electrode and a flat-plate-like second electrode are arranged in opposite positions, and a dielectric body is arranged between the two electrodes. A discharge space is located between the first electrode and the dielectric body, within a gap between the first electrode and the dielectric body. The discharge space has three sides which are gas shielded and a fourth side which opens to end surfaces of the first electrode and the dielectric body. A cooling section cools at least the first electrode and a gas supply section supplies a raw material gas to the discharge space part. A dielectric-barrier discharge is generated in the discharge space part by applying an AC voltage to the first electrode and the second electrode.