Electric Discharge Tubes TRIZ Cases

Auxiliary antenna generates plasma via electromagnetic induction from a main antenna, expanding coverage without adding power sources.

Selective position detection reduces unnecessary wafer transfers, resolving the throughput versus alignment precision trade-off in substrate processing.

A flat-plate electrode arrangement with a dielectric body generates high-density radical gases, avoiding plasma damage to semiconductor surfaces.

A substrate cleaning unit uses a spaced protrusion and liquid supply to remove particles from the bottom surface.

Segmented magnets in a sputtering apparatus maintain an endless leakage field to resolve film thickness distribution issues at the target periphery.

A dual inductively coupled plasma source with a remote plasma source and electron beam generation system enhances plasma distribution.

Heating sputtering targets under vacuum reduces surface hydrogen, improving chamber vacuum degree and plasma stability.

Backings plates with apertures release gas when eroded, triggering alarms to stop sputtering and prevent substrate contamination.

RF frequency analysis maps error signatures to specific components, resolving the trade-off between measurement precision and system complexity.

Inward-facing rotary targets confine plasma within a tubular magnetic circuit to boost film deposition rates.

A dry non-plasma etch system chemically alters and removes target layers using controlled temperature setpoints.

Remote fluorine plasma selectively removes native oxide from silicon substrates, preventing damage to liner and spacer materials during deep trench processing.

STEM projection analysis automates lamella thinning endpointing, reducing operator intervention and eliminating separate TEM scans.

Rotating plasma electrodes eliminate dead zones and gas exchange inefficiencies in narrow hollow bodies, ensuring homogeneous coating.

Dielectric cover ring with spacing portion separates conductive focus ring from floating conductive ring in plasma processing apparatus.

Periodic pulsing of bias power prevents positive charge accumulation in high aspect ratio memory holes, ensuring stable etching without insulation breakdown.

A slanted opening with varying area controls gas conductance to cancel exhaust shifts and improve ashing uniformity.

Replacing metal holders with ceramic assemblies prevents corrosion and eliminates metal contamination during high temperature processing.

A simulation method predicts ultraviolet emission spectra using visible wavelength spectroscopy and electron energy distribution functions.

Segmented conductive portions bias electromagnetic fields away from signal contacts to maintain signal integrity during high-speed data transmission.

An electron beam apparatus uses an electrode to attract electrons and correction coils to maintain primary beam resolution.

Hydrogen plasma treatment smooths organic mask edges, reducing very low frequency line width roughness for precise semiconductor etching.

Height detection unit compares wafer and tray surface levels to identify misalignment, preventing resist burning from inadequate cooling during plasma exposure.

A foreline plasma reactor subsystem treats vacuum exhaust gases using a plasma source and downstream trap to cool the stream.

Accelerated neutral gas cluster ion beams treat silicon substrates to achieve superior surface smoothing without charge-induced damage.

Plasma purging with noble gas removes chlorine from equipment surfaces during nitride film deposition.

A frequency-tuning subsystem adjusts RF generator output by analyzing plasma load impedance trajectories and scaling measurement angles to determine precise frequency steps.

Parallel coil segmentation reduces skin current effects and thermal stress on the dielectric window, maintaining high etching rates without cracking.

An undoped-silicate glass layer passivates chamber components, extending the TEOS accumulation limit by 9 μm and reducing particle defects.

Controlled thermal processing reduces surface defect density and roughness on ceramic articles, minimizing particle contamination in semiconductor etching.

A sputtering showerhead assembly enables simultaneous oxide and metal layer deposition within a single chamber environment.

Porous structures in the substrate and base plate extend conduction paths, suppressing arc discharge while maintaining inert gas flow for temperature control.

Segmented showerhead tiles with independent fluid passageways boost throughput while maintaining temperature uniformity across multiple substrates.

A showerhead electrode assembly uses a conductive gasket interface to enhance thermal conduction between the thermal control plate and electrode.

Sintering a titanium vanadium diboride mixture eliminates binder impurities and multilayer formation to produce highly pure, isotropic coating layers.

A two-stage dodecapole corrector uses series-connected exciting coils to generate opposing magnetic fields.

A plasma generator uses hollow cathode electrodes to stabilize electric discharge and generate high-density plasma under atmospheric pressure.

Zone gas grooves adjust local thermal conductivity via gas pressure to eliminate hot and cool spots across the wafer placement surface.

Inverting the focused ion beam etching direction to the observation-side surface prevents thin film curvature during TEM sample preparation.

Plasma etching creates slanted grooves in silicon substrates for subsequent electroless copper deposition.

A plug-in adapter connects various cable plugs to printed circuit boards using internal contact bodies and locking elements.

Continuous reflected wave analysis distinguishes abnormal unignited states from normal ignition, preventing false detection and protecting RF amplifiers.

A sample holder uses a dual-layer adhesive with distinct elastic moduli to bond ceramic substrates and metal members.

Alternating scan directions correct positional deviations during electron microscope raster scanning, enabling high-accuracy image superimposition.

A multi-mode inspection system stores images from all detection modes to identify defects and determine their characteristics.

Segmented shielding plates adjust their central opening to process different wafer sizes, protecting the chuck from corrosive ionized gases.

Silicone and epoxy resin binders limit impurity generation while absorbing moisture to extend OLED device lifespan.

A bipolar voltage supply unit combines two unipolar current sources to enable four-quadrant operation.

A truncated objective lens with non-rotationally symmetric numerical apertures captures light within tight TEM pole shoe constraints.