Segmented Magnet Unit for Sputtering Film Thickness Uniformity
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Solution Overview
Problem
Existing sputtering apparatuses face challenges in achieving uniform film thickness distribution across the substrate, particularly when adjusting the circumferential film thickness at the outer periphery, as it can lead to deterioration of the film thickness at the inner periphery.
Innovation Solution
A sputtering apparatus with a magnet unit divided into segments, allowing for independent control of angular velocity, maintains an endless leakage magnetic field to adjust film thickness distribution by varying the sputtering rate based on the film thickness in different zones, ensuring uniformity across the substrate.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If the magnet unit rotates to improve target utilization efficiency and uniform erosion, then the target erosion uniformity is improved, but the ability to independently control film thickness distribution in different substrate regions is limited
Solution Approach 1:
The magnet unit is divided into multiple independently controllable segments, allowing each segment to rotate at different speeds or in different directions. This enables simultaneous achievement of uniform target erosion (through coordinated rotation) and independent control of film thickness distribution in different substrate regions (through differential rotational speeds).
Solution Approach 2:
The system implements dynamic control where each magnet segment can adjust its rotational speed independently based on real-time feedback or predetermined profiles. This dynamic adaptability allows the system to optimize both target erosion uniformity and film thickness distribution across different substrate regions under varying process conditions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the readjustment of film thickness distribution, resulting in a more uniform film thickness across the entire substrate surface by controlling the angular velocity of each segment of the magnet unit, thereby improving the utilization efficiency of the target and substrate.
Implementation Method 1
a leakage magnetic field in which a line passing through the position at which the vertical component of the magnetic field becomes zero is closed in an endless manner, is caused to locally act on such a space below the target as is positioned between the center of the target and a periphery thereof
Implementation Method 2
a plasma generating means for generating a plasma inside the vacuum chamber
Implementation Method 3
The sputtered particles scattered out of the target by sputtering get adhered to, and deposited on, the surface of the substrate, thereby forming a thin film thereon
Data Source
AI summary
A sputtering apparatus SM has: a vacuum chamber in which a substrate and a target are disposed to lie opposite to each other; a plasma generating means generating a plasma inside the vacuum chamber; and a magnet unit disposed above the target. The magnet unit has a plurality of magnets with different polarities on a substrate side. A leakage magnetic field in which a line passing through a position where a vertical component of the magnetic field becomes zero is closed in an endless manner, is caused to locally act on such a space below the target as is positioned between the center of the target and a periphery thereof. The magnet unit is divided, on an imaginary line extending from the center of the target toward a periphery thereof, into a plurality of segments each having a plurality of magnets.