Dry Non-Plasma Etch System for Selective Material Removal
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Solution Overview
Problem
Current semiconductor manufacturing techniques face challenges in achieving selective, clean, and targeted removal of materials used in advanced patterning schemes due to poor etch selectivity and pattern damage associated with wet etch processes and dry plasma processes.
Innovation Solution
A dry non-plasma treatment system and method that involves exposing a microelectronic workpiece to a chemical environment at controlled temperatures to selectively remove target layers, using a process chamber with temperature control and gas distribution systems to chemically alter and then elevate the temperature for removal of materials like silicon oxynitride and silicon-containing anti-reflective coatings.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If wet etch chemistry is applied to remove target layers, then material removal is achieved, but etch selectivity is poor and pattern damage occurs
Solution Approach 1:
The patent changes the physical state parameter from liquid (wet etch) to gas phase (dry non-plasma), and controls temperature parameters (35°C to 100°C range) to achieve selective material removal without the harmful effects of wet chemistry while maintaining high etch selectivity
Solution Approach 2:
The patent uses an inert gas environment (nitrogen or other inert gases) to replace wet chemical environments, creating a controlled atmosphere that enables selective etching without pattern damage while maintaining cleanliness and precision
2Manufacturing precision
If dry plasma processes are used to remove materials, then clean removal is achieved, but pattern damage is induced
Solution Approach 1:
The patent changes the energy state parameter from plasma (highly reactive) to thermal/chemical gas phase (controlled reactivity), maintaining clean removal capability while eliminating pattern damage through precise temperature control and chemical environment management
Solution Approach 2:
The patent substitutes the plasma mechanism with a thermal-chemical mechanism, using controlled temperature elevation and gas-phase chemistry to achieve material removal without the damaging effects of plasma while maintaining cleanliness
3Productivity
If temperature is elevated to remove chemically treated surface region, then material removal speed increases, but control precision must be maintained
Solution Approach 1:
The patent implements feedback control through temperature sensors and controllers that continuously monitor and adjust the heating process, ensuring precise temperature maintenance in the 35°C to 100°C range to achieve both fast removal and high precision
Solution Approach 2:
The patent uses dynamic temperature control that can rapidly adjust between different temperature setpoints during the etching process, enabling both high productivity during removal phases and high precision during control phases
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables clean, selective, and targeted removal of materials with high etch selectivity and minimal pattern damage, suitable for sub-30 nm technology nodes, improving the efficiency and accuracy of pattern transfer in semiconductor manufacturing.
Implementation Method 1
exposing the surface of the workpiece to a chemical environment at a first setpoint temperature in the range of 35 degrees C. to 100 degrees C. to chemically alter a surface region of the target layer
Implementation Method 2
elevating the temperature of the workpiece to a second setpoint temperature at or above 100 degrees C. to remove the chemically treated surface region of the target layer
Data Source
AI summary
A method and system for the dry removal of a material on a microelectronic workpiece are described. The method includes receiving a workpiece having a surface exposing a target layer to be at least partially removed, placing the workpiece on a workpiece holder in a dry, non-plasma etch chamber, and selectively removing at least a portion of the target layer from the workpiece. The selective removal includes operating the dry, non-plasma etch chamber to perform the following: exposing the surface of the workpiece to a chemical environment at a first setpoint temperature in the range of 35 degrees C. to 100 degrees C. to chemically alter a surface region of the target layer, and then, elevating the temperature of the workpiece to a second setpoint temperature at or above 100 degrees C. to remove the chemically treated surface region of the target layer.