Decoupled E-Beam Plasma Source for Semiconductor Processing
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Solution Overview
Problem
Conventional plasma sources for semiconductor processing fail to independently control ion and radical concentrations, making it difficult to achieve desirable conditions for dry etching, such as increasing ion concentration while maintaining radical concentration at a constant level.
Innovation Solution
A semiconductor substrate processing system with a separate plasma chamber and fluid transmission pathways to supply reactive constituents, combined with an electron beam source that injects electrons to modify ion density in the processing region, allowing for decoupled control of ion and radical flux.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of operation
If conventional plasma sources are used, then plasma processing can be performed, but independent control of ion and radical concentrations cannot be achieved
Solution Approach 1:
The plasma source is divided into two separate chambers: a plasma generation chamber for producing plasma and a processing chamber for substrate treatment. This segmentation allows independent control of plasma parameters in the generation chamber while maintaining stable processing conditions in the processing chamber, thereby achieving independent control of ion and radical concentrations without excessive system complexity
Solution Approach 2:
A fluid transmission pathway acts as an intermediary between the plasma generation chamber and the processing chamber, transporting reactive constituents (ions and radicals) from the plasma source to the substrate processing region. This intermediary mechanism enables decoupled control by separating the plasma generation function from the processing function while maintaining controlled transport of reactive species
2Quantity of substance
If ion concentration is increased for desirable etching conditions, then etching performance improves, but radical concentration may become uncontrolled
Solution Approach 1:
By separating plasma generation from substrate processing into different chambers, the system can independently optimize ion concentration in the plasma generation chamber for enhanced etching performance while maintaining controlled radical concentrations in the processing chamber through regulated fluid transmission pathways
Solution Approach 2:
The system enables independent adjustment of plasma parameters (such as power, pressure, gas flow) in the plasma generation chamber to control ion concentration, while separately controlling the transmission of reactive constituents through the fluid pathways to maintain precise radical concentration levels during processing
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables independent control of ion and radical concentrations, enhancing the efficiency of semiconductor processing by optimizing ion flux and minimizing radical flux, thereby improving processing outcomes like in atomic layer etching without damaging the substrate.
Implementation Method 1
an electron beam source defined to generate an electron beam and transmit the electron beam through the processing chamber above and across the substrate support
Implementation Method 2
a plasma chamber defined separate from the processing chamber. The plasma chamber is defined to generate a plasma
Data Source
AI summary
A semiconductor substrate processing system includes a processing chamber and a substrate support defined to support a substrate in the processing chamber. The system also includes a plasma chamber defined separate from the processing chamber. The plasma chamber is defined to generate a plasma. The system also includes a plurality of fluid transmission pathways fluidly connecting the plasma chamber to the processing chamber. The plurality of fluid transmission pathways are defined to supply reactive constituents of the plasma from the plasma chamber to the processing chamber. The system further includes an electron injection device for injecting electrons into the processing chamber to control an electron energy distribution within the processing chamber so as to in turn control an ion-to-radical density ratio within the processing chamber. In one embodiment, an electron beam source is defined to transmit an electron beam through the processing chamber above and across the substrate support.