Electric Discharge Tubes TRIZ Cases

Segmented inner and outer coil antennas optimize RF power distribution to reduce voltage drops and stabilize plasma discharge.

A linear ionizer uses spool assemblies to move the electrode past a stationary cleaner, removing surface degradation products.

Adjusting processing container pressure controls plasma density and diffusion distance to remove deposits from uneven surfaces.

A mechanical ignition finger moves along a forced path to contact multiple cathode targets in vacuum coating systems.

A scanning electron microscope uses a multi-layer focus calibration structure to determine acceleration voltage values for precise beam focusing.

Overlapping variable shaped beam shots with varying dosages reduce reticle write time while maintaining pattern accuracy.

Atmospheric-pressure glow discharge heats semiconductor substrates via high-frequency voltage, reducing thermal stress and surface roughing during annealing.

A hollow cathode plasma device uses a pulse generator to produce bipolar medium-frequency voltage between two cathodes.

A dielectric spacer ring insulates the edge ring from the substrate support surface to minimize RF coupling and arcing.

A charged particle beam apparatus uses a machine learning model for position control to automate sample piece fabrication.

Pre-seasoning components via plasma in a dedicated chamber reduces production downtime and wafer damage from in situ conditioning.

A substrate with aperture openings and electrodes arranged at a radial distance from the beam limiting edge influences charged particle beams.

Asymmetric right-angled triangular terminal arrangement resolves soldering difficulty and short-circuit risk while maintaining narrow width.

Segmented pressure barriers mitigate ambient gas diffusion into low-pressure chambers while thermal control prevents reactant condensation.

A conductive pattern on tin-diffused glass creates a blackened interface through firing to maintain low surface resistance.

A decoupled plasma system uses an electron beam to inject electrons into a processing chamber, modifying ion density independently of radical flux.

A stress-buffer layer isolates samples during energetic beam cutting to prevent mechanical damage.

Preliminary bead blasting, polishing, and annealing eliminate surface defects on sputtering targets, reducing particulation and burn-in time.

Segments ALD cycles to isolate substance gas flow, reducing expensive raw material waste during film formation.

Periodic transient conditioning interrupts etching to eliminate aspect ratio dependent etching and maintain consistent etch rates.

Segmenting carbon nanotube yarn and burning attached portions yields uniform field emitters, resolving production complexity from inconsistent end shapes.

Variable beam scan frequencies resolve wafer damage risks from high-frequency limits while maintaining uniform two-dimensional dose distributions.

A power supply device routes coolant through a rotary joint to cool conductive portions while separating voltage paths.

A second transfer lens tunes C5 aberration and defocus in charged particle microscopes.

Segmenting acceleration with a biased electrode reduces interelectronic interaction and energy spread in electron microscopes.

Tuning beam divergence resolves the contradiction between high etch rates and precise profile control for exotic semiconductor materials.

A dual zone plasma processing chamber uses a single planar antenna to generate symmetric electromagnetic fields for simultaneous substrate processing.

A copper-gold alloy bus bar suppresses oxidation and heat generation to maintain stable plasma processing performance.

A plasma source uses gas flow to reduce pressure in an ionization chamber for efficient generation.

Plasma pretreatment and temperature control decompose non-volatile halogenated compounds, eliminating surface roughness during dry etching.

Aminosilane and oxygen plasma cycles deposit a silicon oxide film on chamber walls to stabilize surface conditions during semiconductor processing.

Positioned wafer supports sag the substrate edge to form a physical gas barrier.

Roughened upper surfaces and pre-formed gaps prevent reflector adhesion during thermal expansion.

Sidewall gas supply lines generate a rotational flow pattern inside the processing chamber to peel off reaction by-products from inner walls.

A cylindrical ionization device with removable chamber and integrated flange circuits.

A connector receptacle shell integrates ground contacts and a hollow tongue to protect signal pins during assembly.

Adjustable power supply settings maintain plasma uniformity and prevent yield loss from tilted patterns.

A phase adjusting circuit controls RF supply path impedance to ensure uniform etch rates.

An ellipsoidal plasma chamber wall focuses microwave radiation from an antenna onto a second focal line to enhance reactant density.

A compact dielectric barrier discharge plasma reactor generates ozone from ambient air to decontaminate enclosed volumes.

Fluorine-based inductive plasma etching preserves spacer integrity while removing silicon mandrels.

Geometric contrast frames control electron beam dose to resolve proximity effect distortion and maintain critical dimensions in small semiconductor features.

Linear approximation corrects pulse width errors across varying setting powers, stabilizing plasma processing and reducing misfire risk.

Segmenting deposition into plasma CVD and plasma ALD stages minimizes surface roughness while maintaining step coverage.

A vibration damping system for charged particle beam apparatuses adjusts feedback gain to suppress column vibrations.

A charged particle beam writing apparatus verifies cell patterns using identifiers to prevent coordinate errors.

Selective plasma deposit shields the mask from ion damage, maintaining thickness while enhancing etching efficiency.

A temperature control unit manages gas distribution plate heat using coordinated heating and cooling members.

Bottom-up film deposition fills high aspect ratio trenches without void formation by selectively adsorbing NH2 groups at the pattern base.