Scanning Electron Microscope Focus Calibration Structure for 3D Semiconductor Analysis

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Solution Overview

Problem

Current scanning electron microscopes are limited in their ability to effectively analyze three-dimensional structures of semiconductor devices, as they primarily operate on two-dimensional measurements.

Innovation Solution

The scanning electron microscope apparatus includes an electron gun, focusing lens, electron detector, stage with a focus calibration structure, and a support layer, which allows for precise calibration and control of the electron beam's focus across multiple layers, enabling the determination of acceleration voltage values for accurate 3D imaging.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Adaptability or versatility

If a conventional scanning electron microscope is used for 2D structure measurement, then the measurement is simple and widely applicable, but the ability to analyze 3D structures is limited

Engineering Contradiction:
Improve3D structure analysis capabilityVSAvoidfocus precision
Core Design Contradiction:
Adaptability or versatilityVSMeasurement precision

Solution Approach 1:

The patent introduces a focus calibration structure with multiple layers at different heights to enable 3D structure analysis. By adding vertical dimension calibration targets, the system transitions from 2D to 3D measurement capability, allowing the electron beam to be focused and calibrated at different depth levels within the semiconductor device.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Solution Approach 2:

The focus calibration structure is pre-installed on the stage before sample measurement. This preliminary calibration structure allows the system to determine acceleration voltage values and establish focus parameters in advance, improving both 3D analysis capability and focus precision without adding complexity to the actual measurement process.

Inventive Principle:
Principle #10Preliminary action

2Measurement precision

If the electron beam is focused on multiple layers, then 3D imaging accuracy is improved, but the device complexity increases

Engineering Contradiction:
Improvedepth resolutionVSAvoidcalibration structure
Core Design Contradiction:
Measurement precisionVSDevice complexity

Solution Approach 1:

The focus calibration structure serves as an intermediary element between the electron beam and the actual sample. This calibration structure with multiple layers provides reference targets for determining acceleration voltage values at different depths, enabling precise 3D imaging without directly complicating the sample measurement process. The calibration structure acts as a mediator that establishes focus parameters before actual measurement.

Inventive Principle:
Principle #24Intermediary (Mediator)

3Measurement precision

If acceleration voltage values are determined for multiple layers, then the precision of electron beam focus is improved, but the operation time increases

Engineering Contradiction:
Improvefocus accuracyVSAvoidcalibration time
Core Design Contradiction:
Measurement precisionVSLoss of time

Solution Approach 1:

The focus calibration structure is prepared and positioned in advance on the stage before sample measurement begins. By having the multi-layer calibration structure pre-established, the system can quickly determine acceleration voltage values for different depths during the measurement process without requiring time-consuming calibration procedures for each sample, thus improving focus accuracy while minimizing time loss.

Inventive Principle:
Principle #10Preliminary action

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This solution enables the generation of accurate 3D images of semiconductor devices without disassembly, improving the precision and depth resolution of electron beam focus, allowing for detailed analysis of internal structures.

Implementation Method 1

an electron gun configured to generate an electron beam

Methodology Applied
Scientific EffectElectron beam: Electron Beam

Implementation Method 2

a focusing lens configured to concentrate the electron beam from the electron gun

Methodology Applied
Scientific EffectFocusing: Focusing

Implementation Method 3

an electron detector configured to detect signals emitted from a sample in response to the electron beam incident on the sample

Methodology Applied
Scientific EffectElectron detection: Photoelectric Effect

Data Source

PatentUS11183363B2Scanning electron microscope apparatus and operation method thereof
Publication Date: 2021.11.23 SAMSUNG ELECTRONICS CO LTD
  • US11183363B2 patent drawing
  • US11183363B2 patent drawing
  • US11183363B2 patent drawing

AI summary

A scanning electron microscope apparatus including an electron gun configured to generate an electron beam, a focusing lens configured to concentrate the electron beam from the electron gun, an electron detector configured to detect signals emitted from a sample in response to the electron beam incident on the sample, a stage configured to receive the sample thereon, and a focus calibration structure on an upper part of the stage.