Etch Process Pre-etch Transient Conditioning
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Solution Overview
Problem
Aspect ratio dependent etching during semiconductor wafer processing results in features of different widths being etched at different rates, leading to detrimental outcomes.
Innovation Solution
A method involving multiple cycles with pre-etch transient conditioning of the etch layer, where each cycle includes a transient condition and controlled etching duration to manage etch aspect ratio dependence, utilizing a plasma processing chamber with specific gas sources and RF power control.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional etching is performed on features of different widths, then etching proceeds, but aspect ratio dependent etching causes features of different aspect ratios to etch at different rates
Solution Approach 1:
The patent applies periodic action by implementing a cyclical etching process that alternates between etching steps and transient conditioning steps. The etching step removes material from the etch layer, while the transient conditioning step restores uniform etch rates by modifying the etch layer surface. This periodic alternation between opposing actions (etching that creates aspect ratio dependence and conditioning that reduces it) enables consistent etching of features with different aspect ratios.
Solution Approach 2:
The transient conditioning step serves as a preliminary action performed before the main etching step in each cycle. By conditioning the etch layer surface in advance, the process prepares the surface to receive subsequent etching at a uniform rate, preventing aspect ratio dependent etching from developing during the etching step. This preliminary modification of the etch layer ensures that when etching occurs, all features etch at consistent rates regardless of their aspect ratios.
2Productivity
If etching is performed to achieve desired depth, then features are etched, but features of different widths etch at different rates causing detrimental results
Solution Approach 1:
The cyclical process alternates between etching steps that advance the etch depth and transient conditioning steps that restore etch rate uniformity. By periodically interrupting the etching process to perform conditioning, the system maintains consistent etch rates across features of different widths while still achieving the required etch depth. This periodic intervention prevents the accumulation of aspect ratio dependent effects that would otherwise degrade precision.
Solution Approach 2:
The etching process is segmented into discrete cycles, each comprising an etching step and a transient conditioning step. This segmentation divides the continuous etching process into manageable units where precision can be restored periodically. Each cycle is optimized to achieve a specific amount of etch depth while maintaining rate consistency, and multiple cycles are combined to achieve the total required etch depth with uniform precision throughout.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively reduces or eliminates aspect ratio dependence, ensuring that features of different widths are etched at consistent rates, as demonstrated by the cyclical process and plasma processing system described.
Implementation Method 1
at least one electrode for providing power to the plasma processing chamber enclosure for sustaining a plasma
Implementation Method 2
at least one RF power source is electrically connected to the at least one electrode
Data Source
AI summary
A method for etching features with different aspect ratios in an etch layer is provided. A plurality of cycles is provided wherein each cycle comprises a pre-etch transient conditioning of the etch layer, which provides a transient condition of the etch layer, wherein the transient condition has a duration and etching the etch layer for a duration, wherein the duration of the etching with respect to the duration of the transient condition is controlled to control etch aspect ratio dependence.


