Swirl Flow Gas Supply for Substrate Chamber Cleaning
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Solution Overview
Problem
Existing substrate processing technologies face inefficiencies in removing deposits from the inner walls of processing chambers, leading to frequent chamber openings and reduced throughput due to the difficulty in effectively utilizing purge gases to remove reaction by-products.
Innovation Solution
A substrate processing apparatus with a cylindrical processing chamber and multiple gas supply lines positioned along the sidewall to generate a swirl flow of purge gas, where the flow velocity is higher near the inner wall than near the mounting table, enhancing deposit removal efficiency.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of substance
If a large amount of purge gas is supplied into the processing chamber to remove deposits, then deposit removal capability is improved, but gas consumption increases and cleaning efficiency deteriorates due to poor flow distribution
Solution Approach 1:
The gas supply lines are positioned at specific locations along the sidewall to create localized high-velocity flow regions where deposits need to be removed most effectively. The swirl flow generator creates a rotational pattern that concentrates cleaning action where it is most needed rather than distributing gas uniformly throughout the chamber.
Solution Approach 2:
The system generates a dynamic swirl flow pattern that rotates and circulates the purge gas along the inner wall surface. This dynamic flow pattern continuously refreshes the gas contact with deposit surfaces, improving removal efficiency without requiring proportionally higher gas flow rates.
2Productivity
If conventional gas supply methods are used, then device complexity is low, but deposit removal efficiency is insufficient leading to frequent chamber openings
Solution Approach 1:
The swirl flow generator is integrated within the existing processing chamber structure, nesting the flow control mechanism inside the chamber rather than adding external components. The gas supply lines are positioned along the sidewall within the chamber volume, utilizing existing space efficiently.
Solution Approach 2:
The system uses pneumatic flow control through strategically positioned gas supply lines and a swirl flow generator to achieve effective deposit removal. The controlled gas flow patterns create sufficient shear force to remove deposits without requiring mechanical cleaning components.
3Ease of operation
If purge gas is supplied without optimized flow patterns, then system operation is simple, but gas flow distribution is poor resulting in low deposit removal efficiency
Solution Approach 1:
The gas supply lines are pre-positioned along the sidewall and the swirl flow generator is pre-configured to create the optimal flow pattern before cleaning begins. This preliminary arrangement ensures that when purge gas is supplied, it automatically follows the desired flow path along the inner wall surface without requiring complex real-time control adjustments.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The apparatus improves deposit-removal efficiency by generating a swirl flow that effectively peels off and exhausts deposits from the inner wall surfaces, reducing the need for frequent chamber cleaning and increasing processing throughput.
Implementation Method 1
at least one supply line configured to supply a gas in a direction along an inner wall surface of a sidewall of the processing chamber to generate swirl flow of the gas in the processing chamber
Implementation Method 2
a ventilator configured to exhaust the gas from the processing chamber
Data Source
AI summary
An apparatus of processing a target substrate is provided. The apparatus includes a processing chamber having a substantially cylindrical inner space, a mounting table disposed in the processing chamber and configured to mount thereon the target substrate, at least one supply line configured to supply a gas in a direction along an inner wall surface of a sidewall of the processing chamber to generate a swirl flow of the gas in the processing chamber, and a ventilator configured to exhaust the gas from the processing chamber. Further, in a direction intersecting an axis of the substantially cylindrical inner space, a flow velocity of the gas in a first region close to the inner wall surface is higher than a flow velocity of the gas in a second region where the mounting table is disposed.