Decoupling Capacitor Layout for Noise Reduction and Plasma Protection
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Solution Overview
Problem
Conventional semiconductor devices face challenges in supplying stable power voltage due to increased noise from power and ground voltage lines, particularly due to the plasma damage phenomenon during high-density plasma etching, which degrades the gate insulating layer and affects the reliability and characteristics of the semiconductor device.
Innovation Solution
A semiconductor device layout method that allows direct transfer of both power and ground voltage to adjacent decoupling capacitor cells, utilizing a main power and ground voltage supplying line with sub voltage lines arranged in a grid form to reduce noise, and incorporating antenna diode junctions to prevent plasma damage, thereby avoiding increased inductance and resistance.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If high-density plasma etching is used to advance semiconductor integration, then manufacturing precision and productivity are improved, but plasma damage accumulates in the gate insulating layer degrading reliability
Solution Approach 1:
The patent introduces an antenna diode junction that converts harmful plasma-induced charges into a beneficial effect. The diode junction collects and redirects plasma charges away from the gate insulating layer, transforming the harmful plasma damage into a protected state. The antenna structure serves as a charge collection path that prevents charge accumulation in the gate oxide, thereby converting the harmful plasma exposure into a controlled charge management system that protects the gate insulating layer.
2Power
If conventional decoupling capacitor layout is used, then power voltage supply is provided, but ground voltage line noise increases due to detour voltage transfer and increased inductance
Solution Approach 1:
The patent segments the voltage supply path by introducing separate dedicated ground voltage lines for different regions of the decoupling capacitor. Instead of a single detoured ground path, the ground connection is divided into multiple direct segments (first ground voltage line for first region, second ground voltage line for second region). This segmentation eliminates the detour effect and reduces inductance by providing direct ground paths for each capacitor region, thereby reducing ground noise while maintaining power supply function.
3Device complexity
If antenna diode junction is not inserted in decoupling capacitor, then device complexity is reduced, but gate oxide layer cracks occur due to anions from etching process
Solution Approach 1:
The antenna diode junction acts as an intermediary structure between the plasma environment and the gate insulating layer. It provides a intermediate charge collection and redirection mechanism that protects the gate oxide from direct plasma damage. The diode junction serves as a mediator that intercepts harmful anions and plasma charges before they can reach and crack the gate oxide layer, thereby maintaining gate oxide integrity with minimal additional complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces noise from the ground voltage line, enabling stable power voltage supply to the internal circuit by eliminating the need for detour voltage transfer and minimizing inductance and resistance, thus enhancing the reliability and performance of the semiconductor device.
Implementation Method 1
the decoupling capacitor supplies the internal circuit with a transient large current necessary when a clock of the internal circuit transitions from one state to the other state
Implementation Method 2
In a high density plasma process, particles of a plasma state comprise a neutral atom or molecule which occupies a predetermined percentage, an electron with a negative charge, a cation with a positive charge, and an anion with a negative charge
Implementation Method 3
electrons which move to a stepped portion of a gate oxide layer are reduced such that one end of the diode junction is connected to a ground voltage and the other end is connected to a gate electrode
Data Source
AI summary
A semiconductor device and a layout method of a decoupling capacitor thereof are disclosed. The semiconductor device includes a main power/ground voltage voltage supplying line arranged in a first direction; a plurality of decoupling capacitor cells to reduce power noise generated by the power voltage and the ground voltage in the first direction and in a second direction; a plurality of sub power voltage supplying lines arranged in the second direction in a border of the plurality of decoupling capacitor cells; and a plurality of sub ground voltage supplying lines arranged in a net form in the border of the plurality of decoupling capacitor cells, wherein the plurality of decoupling capacitor cells have a first active region arranged to receive the ground voltage and the second active region disposed to receive the power voltage and to avoid a region where an inversion is formed in the decoupling capacitor.