Deep Trench Double-MIM Capacitor for High-Density TSV Integration
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Solution Overview
Problem
Deep trench capacitors face challenges in achieving high capacitance density and efficient integration within semiconductor devices due to limitations in trench depth and width aspect ratios, which affect their performance and integration with other components.
Innovation Solution
The implementation of a double-MIM capacitor structure within deep trenches, with alternating conductive and dielectric layers, and the use of voids in the insulating layer to manage stress and prevent wafer warpage, allows for increased capacitance and efficient integration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If trench depth is increased to achieve higher capacitance density, then capacitance increases, but manufacturing precision and integration difficulty worsen due to extreme aspect ratios
Solution Approach 1:
The patent transitions from a single deep trench structure to a multi-layer stacked capacitor configuration. By stacking multiple capacitor units vertically (adding the height dimension), the design achieves high capacitance density without requiring excessively deep individual trenches, thereby improving manufacturability and aspect ratio control.
Solution Approach 2:
The capacitor structure is segmented into multiple discrete capacitor units stacked vertically. Each unit has its own electrode pairs and dielectric layers, allowing independent optimization of each segment's dimensions. This segmentation enables better control over the aspect ratio of individual trenches while achieving cumulative high capacitance through the stack.
2Quantity of substance
If multiple capacitor layers are stacked to increase capacitance density, then capacitance increases, but device complexity increases
Solution Approach 1:
The stacked capacitor structure serves multiple functions simultaneously: it provides high capacitance density for memory storage, enables vertical integration to save horizontal space, and creates modular units that can be systematically replicated. The same structural pattern repeats across layers, reducing design complexity through standardization.
Solution Approach 2:
The patent implements a nested structure where multiple capacitor units are stacked vertically within a compact footprint. Each capacitor unit is nested within the vertical space above the previous one, with electrodes and dielectric layers arranged in concentric-like patterns that maximize space utilization while maintaining electrical isolation.
3Quantity of substance
If trench width is reduced to increase capacitance density, then capacitance increases, but manufacturing precision and integration difficulty worsen
Solution Approach 1:
Instead of continuing to reduce trench width horizontally, the patent shifts the capacitance multiplication strategy to the vertical dimension through stacking. This allows maintenance of reasonable trench widths for manufacturability while achieving high capacitance density through multiple vertical layers.
Solution Approach 2:
The capacitor structure is divided into multiple segments stacked vertically, each with optimized trench dimensions that are manufacturable. The segmentation allows each individual trench to have feasible width and aspect ratio, while the cumulative effect of multiple segments achieves the target capacitance density.
Data Source
AI summary
The present disclosure provides a semiconductor device, including a first semiconductor structure and a second semiconductor structure. Each of the first semiconductor structure and the second semiconductor structure includes a substrate; a through silicon via, penetrating the substrate; and a deep trench capacitor, disposed in the substrate, separated from the TSV by a distance. The deep trench capacitor includes a stack, including a dielectric layer between a pair of conductive layers in a trench; and an insulating layer, covering the stack and the trench. The insulating layer surround a plurality of voids in the trench.