Deep Trench Capacitor Seal Ring Layout for Crack-Resistant Chips

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Solution Overview

Problem

Existing semiconductor technologies face challenges in embedding electrical components within a semiconductive substrate to minimize space occupation while maintaining structural integrity and preventing cracks.

Innovation Solution

A semiconductor structure is designed with a substrate featuring an array region and a seal ring region, incorporating recesses and capacitor structures partially embedded within these regions, along with interconnect structures that are electrically coupled to the substrate, enhancing structural strength and minimizing crack formation.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Volume of moving object

If electrical components are embedded within the semiconductive substrate to minimize space occupation, then the physical size of the semiconductor device is reduced, but the structural integrity and crack prevention become more difficult to maintain

Engineering Contradiction:

Improvephysical size of semiconductor deviceVSAvoidstructural integrity

Core Design Contradiction:

Volume of moving objectVSStrength

Solution Approach 1:

The substrate is divided into a first region containing capacitor cells and a second region containing a seal ring structure. This segmentation allows the embedding of electrical components in the first region while the second region provides structural support and crack prevention, resolving the contradiction between miniaturization and structural integrity.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The seal ring structure is designed with a depth that extends into the substrate to a position that prevents crack formation. This beforehand cushioning approach ensures that potential cracks are blocked before they can propagate through the embedded components, maintaining structural integrity while allowing component embedding.

Inventive Principle:

Principle #11Beforehand cushioning (Prior cushioning)

2Productivity

If capacitor cells are embedded within the substrate to reduce space, then integration density is improved, but crack formation risk increases

Engineering Contradiction:

Improveintegration densityVSAvoidcrack prevention

Core Design Contradiction:

ProductivityVSReliability

Solution Approach 1:

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The seal ring structure acts as an intermediary element between the embedded capacitor cells and the substrate surface. It provides a mechanical barrier that prevents crack propagation while allowing the capacitor cells to be embedded at high density in the first region, thus maintaining both integration density and reliability.

Inventive Principle:

Principle #24Intermediary (Mediator)

3Area of stationary object

If components are embedded to minimize surface area occupation, then device footprint is reduced, but manufacturing complexity increases

Engineering Contradiction:

Improvedevice footprintVSAvoidembedding process complexity

Core Design Contradiction:

Area of stationary objectVSDevice complexity

Solution Approach 1:

The seal ring structure is formed using the same recess formation process as the capacitor cells, merging two functions (component embedding and crack prevention) into a single manufacturing step. This reduces the overall manufacturing complexity despite the advanced embedding techniques required, while achieving minimal device footprint.

Inventive Principle:

Principle #5Merging (Combining)

Data Source

PatentUS12575414B2Semiconductor structure having deep trench capacitor and method of manufacturing thereof

Publication Date: 2026.03.10 TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD

AI summary

The semiconductor structure includes a substrate defined with an array region and a seal ring region surrounding the array region, and including a recess extending into the substrate; a capacitor cell disposed within the array region; and a seal ring disposed within the seal ring region, and including a capacitor structure at least partially disposed within the recess, and an interconnect structure disposed over the capacitor structure, wherein the interconnect structure is electrically coupled to the substrate.