Hierarchical Defect Address Storage for Semiconductor Memory Repair
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Solution Overview
Problem
Existing semiconductor memory devices face challenges in efficiently storing error information due to high area requirements and limited repair capabilities, leading to reduced repair rates and extended defect analysis/repair times.
Innovation Solution
A defect address storing device that utilizes parent and child memories to store row and column addresses of defective cells, along with flags indicating whether row or column repairs are necessary, allowing for real-time storage and classification of defective cells during the test process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a large-capacity buffer is used to store a defective bit map in the repair most method, then all defective cell information can be stored, but the area required increases significantly
Solution Approach 1:
The patent divides the storage structure into a hierarchical system with a small-capacity buffer and a large-capacity memory device. The buffer stores essential defect information during testing, while the memory device stores the complete defective bit map. This segmentation allows the system to maintain high repair rates without requiring a large buffer, thus resolving the contradiction between storage capacity and area.
Solution Approach 2:
The patent introduces an intermediary structure (the memory device) that acts as an extension of the buffer. The buffer and memory device work together, with the buffer providing fast access during testing and the memory device providing large-capacity storage. This intermediary approach enables the system to achieve both high repair rates and reduced buffer area.
2Reliability
If defect repair operation is performed only after completion of test process, then all defects can be identified, but the analysis and repair time increases
Solution Approach 1:
The patent performs preliminary defect identification and information storage during the test process itself. The small-capacity buffer continuously stores defect information as tests progress, enabling early detection and classification of defects. This preliminary action reduces the time required for subsequent analysis while maintaining complete defect identification accuracy.
Solution Approach 2:
The patent maintains continuous defect information storage throughout the test process rather than performing a single batch analysis after testing completes. The buffer continuously records defect data, allowing for real-time monitoring and faster subsequent processing. This continuous action reduces overall analysis time while ensuring all defects are captured.
3Area of stationary object
If a small-sized defect bit map is used to reduce area, then buffer area is reduced, but insufficient information is stored and repair rate decreases
Solution Approach 1:
The patent transitions from a single-dimension storage approach (buffer only or memory only) to a two-dimension hierarchical storage system. The buffer provides fast access for active testing, while the memory device provides extensive storage capacity. This dimensional change in the storage architecture enables the system to achieve both small buffer area and high repair rates simultaneously.
Solution Approach 2:
The patent implements a nested storage structure where the small-capacity buffer is embedded within a larger memory device context. The buffer handles immediate testing requirements while the memory device contains the complete defective bit map. This nesting allows the system to leverage both the speed of small storage and the capacity of large storage without requiring the full buffer area that a flat architecture would demand.
Data Source
AI summary
A device for storing error information of a memory device includes a plurality of parent memories and a plurality of child memories. Each of the parent memories stores a row address and a column address of one defective cell. Each of the child memories stores a column address of a defective cell, having a row address identical to a row address stored in the corresponding parent memory, or a row address of a defective cell, having a column address identical to a column address stored in the corresponding parent memory. Herein, each of the parent memories stores information about information about whether a row repair must be performed to repair a defective cell stored in the parent memory and information about whether a column repair must be performed to repair a defective cell stored in the parent memory.


