Depletion MOS Current Scaling Through High-Threshold Channel Coverage
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Solution Overview
Problem
Conventional depletion MOS devices have a constant output current that cannot be scaled on the same device area and process, limiting their application in different circuits.
Innovation Solution
A semiconductor device with a substrate, deep well, first and second doped electrode regions, and a high threshold voltage channel region, where the high threshold voltage channel region covers parts of the second doped electrode region, allowing the output current to be scaled by adjusting the covered area, enabling flexible current output based on demand.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If conventional depletion MOS structure is used, then device simplicity is maintained, but output current cannot be scaled
Solution Approach 1:
The device is segmented into multiple functional regions including deep well, first well, high voltage threshold voltage channel region, first doped electrode region, and second doped electrode region. This segmentation allows independent control of different current paths, enabling output current scaling while maintaining manageable device complexity through modular region design.
Solution Approach 2:
Different regions of the device are doped with different conductivity types (first type and second type) to create localized functional zones. The high voltage threshold voltage channel region with second type conductivity is strategically positioned to cover parts of the second doped electrode, creating local quality variations that enable current scaling without requiring complete redesign of the entire device structure.
2Adaptability or versatility
If device area is kept constant, then manufacturing cost is reduced, but output current cannot be adapted for different circuits
Solution Approach 1:
The device incorporates dynamic control capability through the high voltage threshold voltage channel region that can be selectively activated. By adjusting the coverage area of this channel region over the second doped electrode, the output current can be dynamically scaled to match different circuit requirements while maintaining the same physical device area, achieving adaptability without area expansion.
3Adaptability or versatility
If process complexity is increased, then output current scaling is achieved, but manufacturing difficulty increases
Solution Approach 1:
The device structure is prepared in advance with pre-formed deep well, first well, and doped electrode regions during standard manufacturing processes. The high voltage threshold voltage channel region is then formed to cover specific portions of the second doped electrode, allowing output current scaling to be achieved through a relatively simple additional step rather than complete process redesign, thus maintaining ease of manufacture.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The semiconductor device achieves scalable output current by varying the area covered by the high threshold voltage channel region, maximizing drain current when fully covered, and allowing for customizable current output in different circuit applications.
Implementation Method 1
The substrate has a first type conductivity. The deep well is formed in the substrate and has a second type conductivity opposite to the first conductivity. The first well is formed in the deep well and has at least one of the first type conductivity and the second type conductivity. The first doped electrode region has the first type conductivity. The second doped electrode is adjacent to the first doped electrode and has the second type conductivity.
Implementation Method 2
A high voltage threshold voltage channel region is formed in the first well, extends down from a surface of the substrate, covers parts of a surface of the second doped electrode and has the second type conductivity.
Data Source
AI summary
A semiconductor device and a manufacturing method and an operating method for the same are provided. The semiconductor device comprises a substrate, a deep well, a first well, a first doped electrode region, a second doped electrode region and a high threshold voltage channel region. The substrate has a first type conductivity. The deep well is formed in the substrate and has a second type conductivity opposite to the first conductivity. The first well is formed in the deep well and has at least one of the first type conductivity and the second type conductivity. The first and the second doped electrode regions are formed in the first well. The second doped electrode is adjacent to the first doped electrode and has the second conductivity. The high threshold voltage channel region is formed in the first well and extending down from the surface of the substrate.