Detector Subpixel Segmentation for Dead Time Reduction
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Solution Overview
Problem
Current detector arrangements face challenges with dead times during image acquisition and signal distortion due to permanent sensitivity during readout, leading to misfits and artefacts, especially in time-critical applications like polarimetry and spectroscopy.
Innovation Solution
A detector arrangement with subpixels that can be switched between sensitive and insensitive states, using DEPFETs with potential barriers to selectively allow signal charge collection, minimizing dead times and signal interference during readout.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Measurement precision
If an electronic shutter is implemented using conventional methods, then exposure time control is improved, but dead time increases and measurement precision deteriorates
Solution Approach 1:
Each pixel is divided into multiple subpixels, with each subpixel having its own DEPFET that can be independently controlled. This segmentation allows different subpixels within the same pixel to be in different operational states (sensitive or insensitive), enabling continuous measurement capability while maintaining precise exposure control.
Solution Approach 2:
The sensitivity state of individual subpixels is dynamically switchable through control of the DEPFETs. This dynamic control allows the system to adapt the sensitivity of each subpixel independently, enabling the sensor to remain partially sensitive even during readout operations, thereby reducing dead time while maintaining exposure control precision.
2Productivity
If the sensor remains permanently sensitive during readout, then productivity is improved, but signal distortion increases and measurement precision deteriorates
Solution Approach 1:
By dividing each pixel into multiple subpixels with independent DEPFET control, the system can segment the sensor into sensitive and insensitive regions. This allows continuous measurement in sensitive subpixels while insensitive subpixels undergo readout, maintaining productivity without signal distortion.
Solution Approach 2:
Different subpixels within the same pixel can have different sensitivity states locally. This local quality differentiation enables some subpixels to remain sensitive and collect signals continuously while others are made insensitive during readout, resolving the contradiction between continuous measurement and signal accuracy.
3Measurement precision
If mechanical shutters are used to control exposure, then manufacturing precision is improved, but speed deteriorates and device complexity increases
Solution Approach 1:
The patent replaces mechanical shutter systems with an electronic control mechanism based on DEPFETs. The electronic switching of DEPFETs provides both the precision needed for exposure control and the high speed response required, eliminating the limitations of mechanical shutters while maintaining manufacturing precision through controlled electrical fields.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach minimizes dead times and suppresses misfits, enabling high selectivity in charge collection and maintaining spectroscopic quality even with high parallelization, while avoiding additional dead time and artefacts.
Implementation Method 1
The potential barriers for shielding the insensitive switched subpixel originate from shield electrodes within the region of the insensitive subpixel and extend towards the source region of the insensitive DEPFET so that the internal gate of the insensitive DEPFET is shielded from signal electrons.
Data Source
Figure 1A~1B
Figure 1C
Figure 1D
AI summary
The invention relates to a detector arrangement for the detection of radiation, in particular particle radiation or electromagnetic radiation, comprising a semiconductor detector with multiple pixels for radiation detection. It is proposed that each individual pixel has a first subpixel (1) and a second subpixel (2). The semiconductor detector is switchable between a first collection state in which the first subpixel (1) is sensitive and the second subpixel (2) is insensitive, so that radiation-generated signal charge carriers are collected essentially only in the first subpixel (1), and a second collection state in which the second subpixel (2) is sensitive and the first subpixel (1) is insensitive, so that the radiation-generated signal charge carriers are collected essentially only in the second subpixel (2).Furthermore, the invention includes a corresponding operating method as well as detector arrangements based on the same concept with a higher number of subpixels per pixel.