Developer Composition for Resist Pattern Formation
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Solution Overview
Problem
The challenge is to form finer resist patterns in lithography without increasing the number of steps, as existing developers, especially alkaline aqueous solutions, struggle with poor optical contrast, leading to difficulties in achieving narrow line widths required for miniaturized electronic devices.
Innovation Solution
A developer comprising an organic solvent and a nitrogen-containing compound is used to develop a resist film, which includes a polymer with an acid-labile group that dissociates upon exposure, reducing solubility and minimizing film loss, thereby improving dissolution contrast and lithography characteristics.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If an alkaline aqueous solution is used as the developer, then the development process is simple and effective, but the optical contrast is poor making it difficult to form fine resist patterns
Solution Approach 1:
The patent changes the chemical composition parameters of the developer by using an organic solvent with lower polarity instead of an alkaline aqueous solution. This parameter change increases the optical contrast between exposed and unexposed areas, enabling the formation of fine resist patterns with precise line widths while maintaining process effectiveness.
2Manufacturing precision
If the line width of resist pattern is reduced for miniaturization, then the resolution is improved, but the optical contrast deteriorates making pattern formation difficult
Solution Approach 1:
The patent applies parameter changes by selecting an organic solvent with specific polarity characteristics that enhance optical contrast. This allows the system to achieve high pattern resolution with fine line widths while compensating for the deterioration of optical contrast through the optimized solvent composition.
3Reliability
If an organic solvent with lower polarity is used as the developer, then the optical contrast increases enabling fine resist pattern formation, but the solubility control becomes more challenging
Solution Approach 1:
The patent uses a composite developer system comprising an organic solvent and a nitrogen-containing compound. This composite formulation works synergistically to provide both high optical contrast and precise dissolution control, resolving the contradiction between these two requirements through material composition optimization.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The use of the organic solvent and nitrogen-containing compound developer enhances the formation of resist patterns with reduced Line Width Roughness (LWR) and maintains sufficient Exposure Latitude (EL) and Depth of Focus (DOF), effectively addressing the limitations of existing developers.
Implementation Method 1
a structural unit including an acid-labile group that dissociates due to an acid, the solubility of the polymer in the developer decreasing upon dissociation of the acid-labile group
Implementation Method 2
improving dissolution contrast and lithography characteristics
Data Source
AI summary
A developer includes an organic solvent and a nitrogen-containing compound. The developer is configured to develop a resist film to form a negative resist pattern. The resist film is formed using a photoresist composition. The photoresist composition includes a polymer and a radiation-sensitive acid generator. The polymer includes a structural unit including an acid-labile group.