Diagonal Active Patterns in MRAM for High Integration Density
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Solution Overview
Problem
Current magnetoresistive random access memory (MRAM) devices face challenges in achieving high integration and efficient data storage due to limitations in the layout and connectivity of magnetic tunnel junction (MTJ) structures, which affect the operating voltage and integration density.
Innovation Solution
The MRAM device is designed with a substrate featuring active patterns extending diagonally, gate structures perpendicular to the active patterns, and MTJ structures spaced apart, with a bit line and source line structure configuration that allows for shared connections between memory cells, reducing disturbance and enabling a lower operating voltage for data writing.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Quantity of substance
If MTJ structures are arranged in a conventional layout, then the device structure is simple, but the integration density is low and disturbance between adjacent cells occurs
Solution Approach 1:
The active patterns are arranged in a diagonal direction relative to the bit line structure, transitioning from conventional orthogonal layouts to a diagonal configuration. This dimensional change in pattern arrangement enables higher integration density while maintaining manufacturability through optimized spatial utilization of the substrate.
Solution Approach 2:
The memory device is segmented into distinct functional regions with bit line structures serving multiple memory cells. The source line structure is configured to share connections among multiple memory cells, dividing the device into manageable units that can be densely packed while reducing overall complexity.
2Use of energy by moving object
If conventional bit line and source line configuration is used, then the device structure is simple, but the operating voltage is high and disturbance between cells occurs
Solution Approach 1:
The source line structure is configured to serve multiple memory cells simultaneously, with a single source line structure providing electrical connection to drain regions of multiple active patterns. This multi-functional configuration reduces the number of required interconnect structures, lowering operating voltage through reduced resistance while avoiding increased device complexity.
3Quantity of substance
If active patterns are arranged orthogonally, then the manufacturing process is simple, but the integration density is limited
Solution Approach 1:
Active patterns are arranged in a diagonal direction relative to the bit line structure rather than in conventional orthogonal alignment. This diagonal configuration maximizes the utilization of substrate area, enabling higher integration density while remaining compatible with standard photolithography manufacturing processes through appropriate mask design.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration results in a highly integrated MRAM device with reduced disturbance between MTJ structures, allowing for efficient data storage and operation at lower voltages, enhancing the integration density and performance.
Implementation Method 1
data may be stored by changing a direction of a current using a resistance change of a magnetic tunnel junction (MTJ) structure
Data Source
AI summary
A magnetoresistive random access memory (MRAM) device including a substrate including a plurality of active patterns arranged along a first direction, each of the active patterns extending in a diagonal direction with respect to the first direction; a plurality of gate structures on the substrate, the gate structures extending in a second direction substantially perpendicular to the first direction; a source line structure electrically connected to source regions of the respective active patterns, the source line structure extending in the first direction; a plurality of magnetic tunnel junction (MTJ) structures electrically connected to drain regions of the respective active patterns, the MTJ structures being spaced apart from each other; and a bit line structure electrically connected to the MTJ structures in respective memory cells, the memory cells sharing with the source line structure.