Diamond Layer Packaging for 3DIC Heat Dissipation
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Solution Overview
Problem
The challenge in semiconductor manufacturing is to effectively manage heat dissipation and integrate complex circuitry in three-dimensional integrated circuits (3DICs) while maintaining efficient production and reducing costs, as traditional materials like silicon substrates have limited thermal conductivity.
Innovation Solution
Incorporating a diamond layer with high thermal conductivity into the semiconductor package structure, replacing traditional silicon substrates, to enhance heat dissipation and improve performance and longevity of 3DICs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If traditional silicon substrates are used in 3DIC packaging, then manufacturing processes are well-established and costs are controlled, but thermal conductivity is insufficient leading to heat dissipation problems
Solution Approach 1:
The patent changes the material parameter from silicon to diamond, exploiting diamond's superior thermal conductivity (5-10 times higher than silicon) while maintaining electrical insulation properties. This parameter change directly addresses the heat dissipation limitation of traditional silicon substrates in 3DIC packaging.
Solution Approach 2:
The patent creates a composite structure by integrating diamond layers with existing semiconductor components and packaging materials. The diamond layer is deposited on silicon substrates or used as an intermediate layer between hot spots and heat sinks, combining the advantages of both materials.
2Reliability
If diamond layers are integrated into 3DIC packages, then thermal management performance improves significantly, but manufacturing process complexity increases
Solution Approach 1:
The patent applies diamond layers during the packaging process before final assembly, allowing thermal management to be built into the structure early. This preliminary action ensures heat dissipation pathways are established before components are finalized, improving reliability without requiring complex post-processing.
Solution Approach 2:
The diamond layer serves as an intermediary between heat-generating components and heat sinks, providing both thermal conduction and electrical insulation. This intermediary role simplifies the overall package structure by eliminating the need for separate thermal management components.
3Productivity
If geometry size is reduced to increase functional density, then production efficiency increases and costs decrease, but heat dissipation becomes more challenging
Solution Approach 1:
The patent applies diamond material specifically at locations with highest heat generation and thermal management needs, rather than uniformly across the entire device. This local quality approach targets critical hot spots in high-density circuits, improving thermal management where it matters most while maintaining production efficiency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The diamond layer significantly improves heat dissipation capacity, enhancing the performance and lifespan of 3DICs by efficiently managing thermal issues and supporting complex circuit integration.
Implementation Method 1
Incorporating a diamond layer with high thermal conductivity into the semiconductor package structure, replacing traditional silicon substrates, to enhance heat dissipation
Data Source
AI summary
A semiconductor device and a method of forming a semiconductor device are provided. The semiconductor device includes a first die, a diamond layer and an encapsulant. The diamond layer is disposed on the first die. The encapsulant is disposed on the first die, wherein the encapsulant encapsulates the diamond layer.