Layered Diamond Nuclear Voltaic Power Source for Heat Management
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Solution Overview
Problem
Existing nuclear voltaic technologies face limitations in delivering high enough power for practical applications, struggle with heat management during low usage periods, are forced to choose between high efficiency or high voltage, and lack safeguards against misuse of isotopes.
Innovation Solution
A diamond-based nuclear voltaic device with a layered structure of P+-type and P-type diamond layers, ohmic and Schottky contacts, and a radiation shield, designed to efficiently generate and collect charge while managing heat and ensuring safety.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Power
If traditional semiconductors (Si, GaAs) are used in nuclear voltaic batteries, then the device structure is simple and manufacturing is easier, but the power output is limited due to narrow bandgap resulting in low voltage and low efficiency
Solution Approach 1:
The patent changes the fundamental material parameter from traditional narrow-bandgap semiconductors (Si: 1.12 eV, GaAs: 1.42 eV) to wide-bandgap diamond semiconductor (5.5 eV). This parameter change enables higher voltage operation (up to 2 V) and significantly improved charge collection efficiency (near 100%) while maintaining device functionality. The wide bandgap allows carriers to withstand higher energy radiation without recombination, directly solving the power limitation problem.
Solution Approach 2:
The patent employs a composite structure combining diamond semiconductor layers with specific contact materials (Schottky contacts with Al, Ti, Ni, Au, Ag, Nb, Cu, Cr, Pt and ohmic contacts with Ti, Zr, Hf, TiC, ZrC, HfC). This composite material approach optimizes both high voltage generation and charge collection efficiency, achieving the desired power output while managing the complexity through functional material selection.
2Reliability
If diamond is used to achieve high voltage and long carrier lifetime, then charge collection efficiency approaches 100%, but the device complexity increases due to the need for specialized contact layers and radiation shielding
Solution Approach 1:
The patent applies local quality by using different contact materials in different regions: Schottky contact materials (Al, Ti, Ni, Au, Ag, Nb, Cu, Cr, Pt) at the diamond surface for high voltage extraction, and ohmic contact materials (Ti, Zr, Hf, TiC, ZrC, HfC) at the diamond substrate for efficient charge collection. This localized material optimization achieves near 100% charge collection efficiency while managing the complexity through functional differentiation.
Solution Approach 2:
The patent introduces intermediary contact layers and radiation shield structures that mediate between the diamond semiconductor and the external circuit. These intermediary elements (contact layers, insulator layers, radiation shield) enable the diamond's high voltage and long carrier lifetime properties to be effectively utilized while providing necessary protection and electrical interface functions, managing the overall device complexity.
3Power
If high-power radioisotopes are used to increase power density, then the power output increases significantly, but heat management becomes more difficult during low usage periods
Solution Approach 1:
The patent converts the harmful heat generated by high-power radioisotopes into a beneficial feature by utilizing diamond's exceptional thermal conductivity (2200 W/m·K). The high thermal conductivity allows efficient heat dissipation from the radioisotope source, converting what would be a thermal management problem into an advantage for maintaining stable operation during both high and low usage periods.
4Ease of manufacture
If conventional semiconductors are used, then the device is easier to manufacture with existing technology, but the device lifetime is limited due to radiation damage causing displacement defects
Solution Approach 1:
The patent changes the material parameter from conventional semiconductors to diamond semiconductor, which has superior radiation hardness. Diamond's wide bandgap (5.5 eV) and strong carbon-carbon bonds make it resistant to radiation-induced displacement defects, enabling the device to operate for the entire lifetime of the radioisotope (decades to centuries) without degradation, thus solving the device lifetime limitation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The device provides high-power, safe, and versatile energy generation suitable for applications like smartphones and electric vehicles, with efficient charge collection and heat management, and safeguards against misuse of isotopes.
Implementation Method 1
generating charge using the inelastic scattering of high energy particles such as alpha and beta rays emitted from radioisotopes into a semiconductor
Implementation Method 2
alpha and beta rays emitted from radioisotopes
Implementation Method 3
the at least one diamond-based charge generator comprises an ohmic contact layer and a Schottky contact layer
Implementation Method 4
a radiation shield that encompasses the at least one radioisotope, the at least one diamond-based charge generator, and the at least one electric contact
Data Source
AI summary
A diamond-based high power nuclear voltaic power source is described. The device is designed to supply electrical power by converting radiation energy from radioisotopes into electric power. In the process of extracting the electric power, the structure of the power source is used to assist the electric charge out from the diamond compartment of the device at high efficiency and high power.