Diamond-Embedded Semiconductor Substrate With Via Bypass Cooling

Resolve Bottlenecks,
Find Innovative SolutionsGenerate Solutions

Solution Overview

Problem

Conventional semiconductor structures face inefficiencies in providing holes through diamond substrates, hindering large-scale production and effective heat dissipation due to the low efficiency of processing diamond materials.

Innovation Solution

A semiconductor structure design that incorporates a substrate with a groove accommodating a diamond, allowing the conducting via to bypass the diamond, reducing the difficulty of providing holes and improving heat dissipation efficiency by exposing diamond layers outside the base plate.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Reliability

If a hole is provided through the diamond substrate to create a conducting via, then electrical connection is achieved, but the processing efficiency is extremely low and large-scale production is hindered

Engineering Contradiction:

Improveelectrical connectionVSAvoidprocessing efficiency

Core Design Contradiction:

ReliabilityVSProductivity

Solution Approach 1:

The substrate is segmented into a base plate and a diamond layer, allowing the conducting via to be formed in the base plate rather than through the entire diamond substrate. This segmentation enables easier via formation while maintaining electrical connection functionality.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The base plate acts as an intermediary structure between the diamond layer and the conducting via. It provides a pathway for the via to pass through without requiring direct penetration of the diamond substrate, thus improving processing efficiency.

Inventive Principle:

Principle #24Intermediary (Mediator)

2Reliability

If the conducting via penetrates through the diamond substrate, then electrical connection is established, but the difficulty of providing holes increases significantly

Engineering Contradiction:

Improveelectrical connectionVSAvoiddifficulty of providing holes

Core Design Contradiction:

ReliabilityVSEase of manufacture

Solution Approach 1:

By dividing the substrate into a base plate and diamond layer, the via formation process is relocated to the base plate where holes are easier to create, avoiding the difficulty of drilling through hard diamond material.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

Instead of forming the via through the diamond substrate as in conventional structures, the via is formed in the base plate and extends to the diamond layer interface, inverting the traditional approach to simplify manufacturing.

Inventive Principle:

Principle #13The other way round (Inversion)

3Temperature

If diamond is used for heat dissipation, then heat conductivity is improved, but the complexity of providing vias through diamond increases

Engineering Contradiction:

Improveheat conductivityVSAvoidcomplexity of providing vias

Core Design Contradiction:

TemperatureVSDevice complexity

Solution Approach 1:

The substrate is divided into a base plate and diamond layer, allowing the via structure to bypass the diamond layer and reducing the complexity of via formation while preserving the diamond's heat dissipation functionality.

Inventive Principle:

Principle #1Segmentation

Solution Approach 2:

The via formation complexity is extracted from the diamond layer and relocated to the base plate, separating the heat dissipation function (diamond) from the electrical connection function (via in base plate).

Inventive Principle:

Principle #2Taking out (Extraction)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This design enhances the efficiency of hole provision and heat dissipation, enabling large-scale production while maintaining high heat conductivity and reducing thermal resistance.

Implementation Method 1

heat generated by the HEMT 1 is transferred to the metal grounding layer 3 through the diamond substrate 2, and is then dissipated through the heat sink 4

Methodology Applied

Scientific EffectThermal conduction: Conduction (thermal)

Data Source

PatentUS12593689B2Semiconductor structure with diamond heat dissipation and manufacturing method thereof

Publication Date: 2026.03.31 HUAWEI TECH CO LTD

AI summary

Embodiments of this application provide a semiconductor structure, an electronic device, and a manufacture method for a semiconductor structure, and relate to the field of heat dissipation technologies for electronic products. An example semiconductor structure includes a semiconductor device, a bonding layer, a substrate, a conducting via, and a metal layer. The semiconductor device is disposed on an upper surface of the substrate by using the bonding layer. The metal layer is disposed on a lower surface of the substrate. The substrate includes a base plate, a groove formed on the base plate, and a diamond accommodated in the groove. The conducting via penetrates the substrate, the bonding layer, and at least a part of the semiconductor device, and is electrically connected to the metal layer. The groove bypasses the conducting via.