Nitrogen-Doped Diamond Photoconductive Switch for High-Power Fast Switching

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Solution Overview

Problem

Existing high-frequency switches, particularly those using materials like silicon, gallium arsenide, silicon carbide, and gallium nitride, face challenges in achieving efficient and high-power handling capabilities due to limitations in carrier generation and recombination processes, which affect switching frequency and efficiency.

Innovation Solution

The use of doped diamond photoconductive switches with specific doping levels, wavelength selection, and electrode materials like gallium oxide, along with optimized device architecture and illumination configurations, enhances carrier generation and recombination, thereby improving efficiency and power handling.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Power

If conventional semiconductor materials (silicon, gallium arsenide, silicon carbide, gallium nitride) are used in high-frequency switches, then the switching function is achieved, but the efficiency and power handling capabilities are limited due to carrier generation and recombination process limitations

Engineering Contradiction:
Improvepower handling capabilityVSAvoidswitching efficiency
Core Design Contradiction:
PowerVSReliability

Solution Approach 1:

The patent changes the fundamental material parameter by transitioning from conventional semiconductors to doped diamond, which has superior carrier generation and recombination characteristics. The nitrogen doping concentration is specifically optimized (10^16 to 10^19 atoms/cm³) to achieve the desired balance between conductivity and switching performance, resolving the contradiction between power handling and efficiency

Inventive Principle:
Principle #35Parameter changes

Solution Approach 2:

The invention uses a composite structure combining doped diamond with metal electrodes (such as gallium oxide). This composite material approach leverages the high breakdown field and carrier mobility of diamond while the metal electrodes provide optimal electrical contact, achieving both high power handling capability and high switching efficiency

Inventive Principle:
Principle #40Composite materials

2Productivity

If higher doping levels are used in diamond photoconductive switches, then carrier generation is improved, but material absorption increases reducing efficiency

Engineering Contradiction:
Improvecarrier generation rateVSAvoidmaterial absorption
Core Design Contradiction:
ProductivityVSLoss of energy

Solution Approach 1:

The patent optimizes the nitrogen doping concentration parameter within a specific range (10^16 to 10^19 atoms/cm³). This controlled parameter change ensures sufficient carrier generation for high-speed switching while maintaining low enough absorption to preserve optical efficiency and overall device performance

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The doped diamond switches achieve increased efficiency and power handling capabilities, enabling sub-pico second switching speeds and high output power with reduced material absorption and improved voltage handling.

Implementation Method 1

The region comprising the doped diamond material is configured to receive light from a light source operable at a wavelength in a range from 300 nm to 450 nm. The first electrode and the second electrode are configured to establish an electric field across the region comprising the doped diamond material such that the region becomes conductive in response to receiving the light from the light source.

Methodology Applied
Scientific EffectPhotoconductivity: Photoconductivity

Data Source

PatentUS12414387B2Photoconductive switch with diamond
Publication Date: 2025.09.09 LAWRENCE LIVERMORE NAT SECURITY LLC
  • US12414387B2 patent drawing
  • US12414387B2 patent drawing
  • US12414387B2 patent drawing

AI summary

Devices, methods and techniques related to photoconductive switches using diamond are disclosed. In one example aspect, a photoconductive apparatus includes a diamond layer positioned to receive a light. The diamond layer is doped with nitrogen. The apparatus also includes a first electrode coupled to the diamond layer to provide a first electrical contact for the diamond layer, and a second electrode coupled to the diamond layer to provide a second electrical contact for the diamond layer and configured to reflect the light back to the diamond layer. The first electrode and the second electrode are configured to establish an electric field across the diamond layer in response to receiving the light.