Diamond Composite Wafer Assembly for High-Power Chip Cooling
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Solution Overview
Problem
The escalating power consumption and thermal management challenges in data centers and high-performance computing applications are limiting the potential of advanced ICs and SiPs, particularly due to the inefficiencies of air cooling and the need for more effective thermal conductivity materials.
Innovation Solution
The development of diamond composite wafers through heterogeneous integration of diamond with silicon or silicon carbide, combined with advanced packaging and cooling methods like direct-to-chip liquid cooling and immersion cooling, to enhance thermal conductivity and manage heat effectively.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If conventional air cooling methods are used, then device simplicity is maintained, but thermal management effectiveness deteriorates
Solution Approach 1:
The patent changes the thermal conductivity parameter of the substrate material by transitioning from conventional substrates to diamond-based composite substrates. This material parameter change enables superior heat dissipation capabilities, allowing the system to manage higher temperatures and power densities without proportionally increasing cooling system complexity.
Solution Approach 2:
The patent employs diamond composite materials that combine diamond particles or crystallites with a substrate matrix to create a composite substrate with enhanced thermal conductivity. This composite approach achieves superior thermal management effectiveness while maintaining relative simplicity in the overall device structure, as the thermal enhancement is built into the substrate material itself rather than requiring separate complex cooling systems.
2Temperature
If diamond blocks are attached to semiconductor substrate, then thermal conductivity is improved, but manufacturing complexity increases
Solution Approach 1:
The patent segments the diamond structure into discrete diamond blocks or crystallites that can be independently prepared and then attached to the semiconductor substrate. This segmentation allows for simplified manufacturing where smaller, manageable diamond components are used rather than requiring large monolithic diamond substrates, reducing the overall manufacturing complexity while still achieving improved thermal conductivity through the distributed diamond structures.
3Power
If chip power increases to meet data center demands, then processing performance is improved, but thermal management challenges worsen
Solution Approach 1:
The patent changes the thermal conductivity parameter of the substrate material to match and support higher power densities. By using diamond-based composite substrates with significantly higher thermal conductivity than conventional substrates, the system can handle increased chip power for improved processing performance without proportionally worsening thermal management challenges. The high thermal conductivity parameter of diamond enables efficient heat removal from high-power chips.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The diamond composite wafers provide superior thermal conductivity, enabling efficient heat management and cooling solutions for high-power chips, addressing the limitations of conventional air cooling and preparing for future chip power increases.
Implementation Method 1
a thermal conductivity of the first semiconductor substrate is smaller than that of the diamond block
Data Source
AI summary
A method to form a first diamond composite wafer, a second diamond composite wafer or a third diamond composite wafer with a predetermined diameter includes the following steps: preparing a plurality of diamond blocks, wherein each diamond block has a dimension smaller than the predetermined diameter; attaching the plurality of diamond blocks to a first semiconductor substrate with the predetermined diameter to form a first temporary composite wafer, wherein a thermal conductivity of the first semiconductor substrate is smaller than that of the diamond block; and filling gaps among the plurality of diamond blocks of the first temporary composite wafer to form the first diamond composite wafer; or attaching the first diamond composite wafer to a second semiconductor substrate with the predetermined diameter to form the second diamond composite wafer, or removing the first semiconductor substrate from the first diamond composite wafer to form the third diamond composite wafer.