Diamond Reconstituted Wafer Bonding for Low Thermal Resistance
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
The integration of diamond dies into semiconductor manufacturing is challenging due to the difficulty in processing non-silicon materials, high cost of thick single crystal diamond, and the need for efficient thermal management across chip, package, and system levels, which existing technologies have not adequately addressed.
Innovation Solution
The production of a reconstituted wafer with diamond dies, using a temporary or permanent carrier wafer, and employing high-force metal bonding techniques to minimize thermal resistance and mechanical stress, while ensuring compatibility with semiconductor processing infrastructure.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Temperature
If thick single crystal diamond is used for heat spreading, then thermal management performance is improved, but manufacturing cost increases
Solution Approach 1:
The diamond heat spreader is divided into multiple thin diamond layers bonded together, replacing a single thick diamond layer. This segmentation reduces the cost of diamond material while maintaining the thermal management performance through the combined effect of multiple layers.
Solution Approach 2:
The patent uses composite structures combining diamond layers with other materials (such as metal bonding layers and carrier substrates) to create a reconstituted wafer. This composite approach allows achieving the thermal management benefits of diamond while reducing overall manufacturing cost through the strategic use of materials.
2Temperature
If diamond dies are integrated into semiconductor manufacturing, then thermal management is improved, but processing difficulty increases
Solution Approach 1:
Metal bonding layers are introduced as intermediary materials between the diamond layers and carrier substrates. These bonding layers facilitate the integration of diamond into existing semiconductor manufacturing processes by providing compatible bonding surfaces and reducing processing difficulties.
Solution Approach 2:
The diamond layers are prepared and bonded together in advance to form a reconstituted wafer structure before final integration into semiconductor devices. This preliminary preparation allows for optimized processing conditions and reduces the complexity of integrating diamond into existing manufacturing lines.
3Temperature
If multiple diamond layers are bonded together, then thermal management performance is improved, but thermal resistance at interfaces increases
Solution Approach 1:
The patent optimizes parameters such as bonding pressure, temperature, and metal layer thickness to minimize thermal resistance at the interfaces between diamond layers. By carefully controlling these parameters, the thermal performance of the multi-layer structure approaches that of a single thick diamond layer.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution provides a low-thermal resistance, mechanically stable reconstituted wafer that enhances thermal management across chip, package, and system levels, improving performance, reliability, and energy efficiency of advanced chip packages.
Implementation Method 1
diamond conducts heat very well and can serve as a heat spreader in electronics devices
Implementation Method 2
employing high-force metal bonding techniques to minimize thermal resistance
Data Source
AI summary
A reconstituted wafer product may include a plurality of die structures bonded to a wafer in a manner that provides a thermally conductive connection between the wafer and the plurality of die structures. The wafer is compatible with semiconductor processing. Each die structure may include a die containing diamond bonded to a heatsink-side surface of the wafer. Two or more dies containing diamond in the plurality of die structures are of different thickness.