Die-Bonding Adhesive Layer Thermal History Resistance
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Solution Overview
Problem
Existing die-bonding layer formation films struggle with thermal history resistance and suitability for wire bonding, leading to potential conduction failures and poor connection reliability between semiconductor chips and circuit substrates due to inadequate adhesive properties.
Innovation Solution
A die-bonding layer formation film with an adhesive layer that has a local minimum storage elastic modulus between 80° C. to 150° C. and a shear strength of 20 N/2 mm² to 50 N/2 mm², comprising a polymer component, a curable component, and a curing accelerator, ensuring high adhesion reliability and connection reliability through thermal history resistance and wire bonding suitability.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a thermosetting-type adhesive layer with high cross-linking density is used to improve thermal history resistance, then bubble suppression improves, but suitability for wire bonding deteriorates
Solution Approach 1:
The patent applies parameter changes by controlling the glass transition temperature (Tg) of the adhesive layer within a specific range (50°C to 150°C) and adjusting the storage elastic modulus at high temperature (175°C) to be within 10³ to 10⁸ Pa. These parameter optimizations enable the adhesive to maintain appropriate softness for wire bonding while providing sufficient thermal history resistance to suppress bubble generation.
Solution Approach 2:
The patent uses composite materials by formulating an adhesive layer containing both thermosetting resin components (for thermal resistance) and thermoplastic resin components (for wire bonding suitability). This composite composition achieves a balance between thermal history resistance and ease of wire bonding operation.
2Strength
If adhesive strength is increased to improve bonding reliability, then adhesion improves, but connection reliability may deteriorate due to excessive rigidity
Solution Approach 1:
The patent optimizes the storage elastic modulus at high temperature (175°C) to be within 10³ to 10⁸ Pa, which balances adhesive strength with connection reliability. This parameter control ensures the adhesive layer has sufficient strength for bonding while maintaining appropriate flexibility to prevent conduction failures during wire bonding.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The proposed die-bonding layer formation film achieves high adhesion reliability and connection reliability, effectively preventing conduction failures and ensuring stable bonding even under thermal stress, thereby enhancing the reliability of semiconductor devices.
Implementation Method 1
a die-bonding layer formation film having the following characteristics can be provided with an adhesive layer that is excellent in the thermal history resistance and in the suitability for wire bonding
Implementation Method 2
when a temperature dependency of a storage elastic modulus of the adhesive layer is measured, the storage elastic modulus has a local minimum value at a temperature within a range of 80° C. to 150° C.
Data Source
AI summary
A die-bonding layer formation film to be used for fixing a processed product to an adherend, includes an adhesive layer, wherein, the storage elastic modulus has a local minimum value at a temperature within a range of 80° C. to 150° C., wherein the adhesive layer has a shear strength to a peeling strength test substrate of 20 N/2 mm□ [N/(2 mm×2 mm)] or more and 50 N/2 mm□ [N/(2 mm×2 mm)] or less, wherein the shear strength is measured after the processed product is placed above the peeling strength test substrate via the die-bonding layer formation film and the die-bonding layer formation film on the peeling strength test substrate is heated at 175° C. for 1 hour and then further maintained under an environment of 250° C. for 30 seconds. Bubbles (voids) are unlikely to grow at the boundary between the adhesive layer and an adherend even when subjected to thermal history.