Semiconductor/Solid-State Device Details TRIZ Cases

A wiring substrate employs a two-diameter via design to match thermal expansion coefficients and reduce semiconductor package warpage.

A semiconductor package uses a cavity in a metal plate to serve as an etching barrier while supporting insulated posts for electrical connections.

Tailoring the cavity gap width based on recess volume distribution ensures uniform insulating layer thickness, resolving via hole dimension inconsistencies.

A multi-pattern isolation structure surrounds through electrodes in semiconductor devices to enhance electrical connectivity and structural integrity.

Openings in conductive pads allow elements to penetrate and wrap around pad edges, increasing contact area to prevent delamination and boost product yield.

Via patterns pass through a core layer and resin layers to equalize signal path lengths, preventing data processing speed deviations in stacked chips.

Segmenting cut patterns across multiple masks increases spacing and reduces length, resolving narrow end-to-end space bottlenecks in FinFET fabrication.

Pressure via elastic layer ensures continuous shield resin adhesion across rounded ridge lines, preventing disconnection at the bottom surface.

Via holes expose thermal interface material on circuit substrates, enabling visual verification of filling while maintaining electrical insulation.

Pre-formed mask patterns on the tape eliminate photolithography steps, reducing processing time and defective chips during semiconductor plasma dicing.

Strategic inflow openings in a partition direct refrigerant flow to suppress temperature differences across semiconductor elements.

Carbon nanotube films on a chuck substrate compensate height differences and maintain alignment accuracy during collective bonding.

A via contact structure uses dual silicide layers to ensure reliable electrical connection with diffusion regions.

Buried thermally conductive layers extract heat from stacked semiconductor blocks via vertical vias, preventing substrate overheating during fabrication.

Dual copper layer process with varying dopant content prevents void formation at interfaces while maintaining low resistivity in sub-30 nm interconnects.

A reinforcement member with a lower coefficient of linear expansion sits at the memory chip periphery to maintain planar stability during thermal processing.

An insulating layer with a recessed first portion and coplanar second portion contains sealing resin without a dam, protecting the heat dissipation paste.

Discontinuous sealing film boundaries at bump parts relieve cutting stress, preventing micro-cracks and water infiltration in display devices.

Liners shield brittle low-k films from dicing cracks while providing a smooth surface for continuous conductive seed layer deposition.

Grid segmentation suppresses substrate warping while isolating the temperature sensor in undivided regions to prevent excessive heat accumulation.

Dual guardring arrangement positions inner and outer rings to protect active areas during normal operation and electrostatic discharge events.

Conductive vias connect aligned top and bottom bonding pads, eliminating wire bonding complexity and reducing manufacturing costs.

Dummy gate masks enable plasma doping and self-aligned etching to resolve channel shape control issues in shrinking FinFET features.

Segmenting the heat spreader over primary IC die reduces thermal resistance and crosstalk for adjacent thinner secondary IC dies.

Shared metal layers integrate CMOS image sensors with MIM capacitors, reducing fabrication complexity.

An integrated thermal flow assembly merges a fan and fin stack to dissipate heat from compact electronic devices.

Filled trenches and vias form a 3D crack-stop structure that prevents through-substrate cracks in brittle thin glass.

Integrates passive element networks into semiconductor interposers to resolve routing complexity in 3D packaging.

Horizontal integration via post passivation interconnect lines joins heterogeneous chips, reducing package height while maintaining high density.

A redistribution layer uses under ball release layers to increase solder pad bonding area.

Placing the shielding layer on the die lateral surface eliminates trench formation, resolving precision bottlenecks while boosting production rates.

Nested via wirings create flush identification marks on wiring substrates, resolving insufficient visibility of manufacturing defects.

Segmenting electrical and thermal paths in stacked chips resolves the trade-off between signal speed and inadequate thermal dissipation.

Dual-layer package body uses different materials to reduce electromagnetic interference while minimizing parasitic capacitance from passive components.

A semiconductor structural member with through-vias supports dies during encapsulation.

A series LC circuit between the seal ring and ground filters 1 GHz to 15 GHz noise, reducing coupling to analog blocks.

A conductive cap layer over semiconductor dies equalizes electrical potential, preventing EOS and ESD damage during high-density packaging.

Mounting capacitors on a carrier near the die reduces loop inductance and improves decoupling efficiency.

A release layer enables clean separation of the carrier substrate from the adhesive layer, preventing damage to solder balls and eliminating residue formation.

A conductive shielding ring surrounds the via hole conduction layer to prevent corrosion and ensure reliable electrical connections.

Plating exposed semiconductor lead surfaces prevents oxidation and ensures reliable soldering onto printed circuit boards.

An intermediary metal layer creates a harder alloy region at the bonding interface, resolving uneven strength from thermal expansion differences.

A non-reactive interface structure reduces contact resistance in semiconductor device contacts.

A dual shield film structure deposits a thick metal grain layer inside resin seal recesses to ensure adequate shielding coverage.

A polyimide layer defines solder area dimensions on a semiconductor surface to prevent lateral displacement during assembly.

Tiered offset stacked die assemblies use conductive pillars to bridge interconnect pads and support bond pads for electrical connections.

A segmented heat sink base with wider side portions supports fins for efficient thermal energy removal from integrated circuit packages.

A nitride diffusion barrier prevents copper and mobile ion migration through oxide layers, reducing threshold voltage shifts in SOI wafers.

Segmenting the chip body into multiple units with ring pads increases output pin count without enlarging the package volume.

Segmented cover layers shield dark current pixels, preventing signal scavenging from active pixels and reducing sensor footprint.

A back-end-of-line e-fuse structure uses a sub-lithographic via to enable reliable electromigration programming.

Sub-resolution dummy features enhance overlay mark signal strength to resolve alignment precision trade-offs during device scaling.

Cavity substrates enable stacked semiconductor die packages that reduce thermal resistance and lower operating temperatures.

Active regions buffer potential differences between adjacent transistor arrays, preventing withstand-voltage breakdown while reducing transistor count.

Segmented metal wire bonding creates a stable loop shape on the sealing material surface, preventing secondary breakdown damage during overcurrent events.

A transient liquid phase bonding method using plasma-treated fluorinated compounds to create void-free intermetallic bonds between metallic layers.

A pinched polysilicon fuse design concentrates carriers to break down the structure.

Segmented SU8 photoresist layers create cavities around acoustic wave devices, resolving strength issues while preventing packaging material contact.

Interlayer insulating film steps guide dicing cracks upward in semiconductor devices.

A multiple-chip package uses pre-molded leadframes and flip-chip solder bumps to join semiconductor dice.

Ion-cut transfers mono-crystalline layers to resolve TSV alignment limits and defect density while preserving metallization reliability.

Vertical lifting of a removable transparent cover avoids collisions with neighboring components during removal.

A junction box embeds overheating switching elements in expanding material to isolate them from oxygen.

A conductive frame reduces electromagnetic interference and dissipates heat in miniaturized semiconductor packages.

Stacked metal layers electrically couple strip electrodes to reduce geometrical center distance between switches and capacitor, lowering switching losses.

Die paddle extensions create dedicated ground bond locations, resolving insufficient voltage supply space in compact multi-chip modules.

A mushroom-shaped secondary redistribution structure supports interconnection balls on a primary circuit layer.

Relief channel vias minimize silicon usage and boost active circuitry density while resolving CTE mismatch stress.

Partially etched grooves guide resin away from down bond regions, preventing adhesion failures and open circuits.

A semiconductor package bonding layer uses an Ag3Sn intermetallic compound formed by sintering metal particles with solder material.

Via holes in wafer edge dam structures balance adhesion layers, preventing glue over-filling and delamination.

Adhesive layer featuring a local minimum storage elastic modulus between 80 and 150 C prevents bubble growth during thermal history.

Replacing abrupt solder resist edges with a sloped photoresist layer reduces surface tension to prevent voids during underfill deposition.

Imaging fiducial markers on component sheets aligns singulating devices, preventing resistor damage during cutting.

Shielding metal balls surround semiconductor dies to block electromagnetic interference without increasing package height.

Asymmetric package arrangement and adhesive bonding resolve cuboid shape challenges to ensure reliable upright connection stability.

Compression molding encapsulates dies and conductive pillars within mold layers, eliminating sequential build-up substrates and bondwires.

Sequential electroplating creates a final metal layer with varied line thicknesses to support logic and power circuits without complex single-layer constraints.

Six-lens optical system in a hollow carrier reduces module height to 3.94mm, resolving the trade-off between compact size and large aperture f/0.85.

A bump electrode with a protruding portion penetrates the interlayer insulating film to enable back-surface electrical connections.

A semiconductor patterning method uses self-aligned spacers to form multiple plug holes simultaneously.

Segmenting the seed layer prevents high local deposition rates that cause voids in recessed via features.

An oxidized metal oxide layer acts as an etching stopper, preventing overetching damage during MTJ processing.

Removing cobalt oxidation layers increases contact area, reducing resistance in semiconductor middle-of-line interconnects.

Conductive pillars electrically interconnect embedded integrated passive devices within a semiconductor package.

Triple etching separates bond pads and lead lines on different levels, reducing clearance distance to increase solder bump density in flip chip packages.

Segmented metal layers with longitudinal slots reduce singulation resistance, resolving the trade-off between alignment precision and die yield.

Carbon-free fluorine gas modifies a silicon oxycarbide film to boost etching resistance while lowering dielectric constants.

A heat conducting component positioned near a heat generating element stabilizes thermal transfer within an electronic control unit.

Recessed interposer zones allow larger central interconnects for current capacity while smaller peripheral links increase I/O density.

Segmented sensor bus wires reduce signal processing complexity while maintaining measurement precision for capacitive input devices.

Stacked metal layers in the scribe area terminate cracks during dicing, preventing propagation into semiconductor chips and avoiding alignment precision issues.

Optically controllable materials enable on-demand electrostatic discharge protection without occupying die space or increasing capacitive loading.

Direct bonding method for double-sided cooling power modules using patterned sintering to join semiconductor chips without protrusions.

A semiconductor device arranges switching elements in a matrix on an insulating substrate to increase rated current capacity.

Segmented oxide bonding integrates three chips by joining mixed-bonded pairs with oxidized layers, resolving insufficient 3D-IC integration degrees.

Low-modulus soft zones embedded in chip boundary projections absorb compressive forces, reducing thermomechanical stress and warping during thermal cycling.

A semiconductor pad array combines via-in-pad and non-via-in-pad configurations to increase connection density on the substrate surface.