Double-Sided Cooling Power Module Direct Bonding
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Solution Overview
Problem
Conventional double-sided cooling type power modules face issues with thermal stress and structural defects due to thick spacers or protrusions used for bonding, which affect heat dissipation and electrical performance.
Innovation Solution
A method for manufacturing a double-sided cooling type power module that directly bonds a semiconductor chip to a substrate by patterning and sintering bonding material on separate regions for the gate and source electrode parts, eliminating the need for protrusions or spacers, thereby enhancing heat conductivity and reducing thermal stress.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a thick spacer is used to secure bonding wire space, then the bonding wire connection is ensured, but thermal stress increases and chip damage occurs
Solution Approach 1:
The patent removes the thick spacer structure entirely and replaces it with a protrusion structure that integrates the bonding function directly into the substrate. This extraction of the harmful spacer element eliminates the thermal stress problem while maintaining the necessary bonding wire clearance through the redesigned protrusion geometry.
Solution Approach 2:
The patent changes the dimensional parameters of the bonding structure by reducing the thickness from 1.2mm spacer to a much thinner protrusion structure. This parameter change maintains the functional requirement of bonding wire space while dramatically reducing the thermal mass that causes expansion and contraction stress on the chip.
2Object-affected harmful factors
If wire bonding is removed to eliminate spacer, then thermal stress is reduced, but bonding material transfer process complexity increases
Solution Approach 1:
The patent applies preliminary action by pre-forming the protrusion structure on the substrate before the bonding process. This advance preparation of the bonding geometry eliminates the need for complex real-time material transfer operations, as the bonding material is simply applied to the pre-formed protrusion structure that already provides the necessary clearance and bonding surface.
3Length of stationary object
If protrusion structure is used to bond directly, then spacer thickness is reduced, but manufacturing process complexity increases
Solution Approach 1:
The patent applies local quality by forming protrusions only at the specific locations where bonding is required, rather than using a uniform thick structure throughout. This localized protrusion formation allows the majority of the substrate to remain thin and simple, while only the necessary bonding areas have the added structural complexity, thereby easing the overall manufacturing process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach reduces the maximum surface temperature of the chip by 3.5-8% and lowers the module's thermal resistance by 23-27%, improving electrical characteristics and cost competitiveness by removing unnecessary structural components.
Implementation Method 1
sintering an upper bonding layer by pressurizing and heating the semiconductor chip
Data Source
AI summary
The present disclosure provides a method for manufacturing a double-sided cooling type power module including separately patterning a bonding material on a base film into two regions, positioning a semiconductor chip on the patterned bonding material, transferring the patterned bonding material to one surface of the semiconductor chip by pressurizing the semiconductor chip, positioning the bonding material of the semiconductor chip on an upper electrode layer formed on an upper substrate to be in contact with the upper electrode layer, and sintering an upper bonding layer by pressurizing and heating the semiconductor chip. According to the present disclosure, it is possible to separately dispose the bonding material on each of gate and source electrode parts on an upper portion of the chip even without protrusion to directly bond the chip and the substrate.