Semiconductor Package with Aligned Top and Bottom Bonding Pads
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Solution Overview
Problem
Existing semiconductor package stacking arrangements require significant space for bond wires and through hole vias, increasing manufacturing costs and complexity, and often involve dissimilar solder bumps that complicate proper orientation during stacking.
Innovation Solution
The semiconductor device features conductive vias and conductive layers on both surfaces of the die, with passivation layers and bonding pads that are aligned and electrically connected, allowing for efficient stacking without wire bonding or spacers, and enabling the use of similar top and bottom bonding pads for simplified orientation and reduced manufacturing costs.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If bond wires and through hole vias are used for semiconductor package interconnects, then electrical connection between packages is achieved, but manufacturing cost and device complexity increase
Solution Approach 1:
The patent removes bond wires and through hole vias from the stacking arrangement, retaining only the essential function of electrical interconnection through simplified solder bump structures. This extraction eliminates unnecessary complexity while preserving the core electrical connection capability.
Solution Approach 2:
The solder bumps serve multiple functions: they provide electrical interconnection, mechanical support, and alignment features for stacked packages. This multi-functionality replaces the separate roles previously filled by bond wires, through hole vias, and alignment structures, simplifying the overall manufacturing process.
2Ease of operation
If dissimilar solder bumps are used for different packages, then proper orientation can be achieved, but manufacturing cost and stacking complexity increase
Solution Approach 1:
The patent employs asymmetric features on the solder bumps, such as varying heights or patterns, to indicate proper orientation for stacking. This asymmetric design provides clear orientation guidance while maintaining manufacturing simplicity, avoiding the need for complex dissimilar structures on different packages.
Solution Approach 2:
Specific local features are introduced on selected solder bumps to provide orientation information, while the majority of solder bumps maintain a standard uniform design. This localized differentiation achieves orientation control without requiring all solder bumps to be dissimilar, thereby reducing manufacturing complexity.
3Reliability
If space is allocated for bond wires in stacking arrangement, then wire bonding can be performed, but package area and manufacturing cost increase
Solution Approach 1:
The patent replaces the mechanical wire bonding system with a direct solder bump-to-solder bump connection system. This substitution eliminates the need for additional space required for wire routing and bonding equipment, reducing the overall package area while maintaining reliable electrical interconnection.
Solution Approach 2:
The patent merges the electrical interconnection function with the mechanical support structure by using solder bumps that serve both purposes simultaneously. This integration eliminates the separate wire bonding infrastructure, reducing the space required for stacking arrangements.
Data Source
AI summary
A semiconductor device includes a first semiconductor die. A plurality of conductive vias is formed around the first semiconductor die. A first conductive layer is formed over a first surface of the first semiconductor die and electrically connects to the plurality of conductive vias. A second conductive layer is formed over a second surface of the first semiconductor die opposite the first surface and electrically connects to the plurality of conductive vias. A first passivation layer is formed over the first surface and includes openings that expose the first conductive layer. A second passivation layer is formed over the second surface and includes openings that expose the second conductive layer. Bonding pads are formed within the openings in the first and second passivation layers and are electrically connected to the first and second conductive layers. An interconnect structure is disposed within the openings in the first and second passivation layers.


