Semiconductor Device Matrix Arrangement for Thermal Stress Reduction

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Solution Overview

Problem

Conventional semiconductor power modules face challenges in increasing rated current without making the insulating substrate and module shape laterally long, which leads to reduced thermal life due to increased stress from temperature changes.

Innovation Solution

A semiconductor device with a continuous metal pattern bonded to an insulating substrate, where switching elements are arranged in a matrix of multiple rows and columns, with adjacent second main electrodes electrically connected by main-current wires, allowing for a higher number of elements without extending the substrate's length.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Quantity of substance

If the number of semiconductor elements connected in parallel is increased to raise rated current, then the rated current capacity increases, but the insulating substrate shape becomes laterally long

Engineering Contradiction:
Improvenumber of semiconductor elementsVSAvoidinsulating substrate lateral length
Core Design Contradiction:
Quantity of substanceVSLength of stationary object

Solution Approach 1:

The patent transitions from a one-dimensional linear arrangement of semiconductor elements to a two-dimensional matrix arrangement (multiple rows and columns). This dimensional change allows the same number of elements to be packed more efficiently, reducing the lateral length of the insulating substrate while maintaining the required rated current capacity through parallel connection of multiple elements.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

2Quantity of substance

If the insulating substrate lateral length is increased to accommodate more semiconductor elements, then the rated current capacity increases, but the thermal life is remarkably shortened due to increased stress

Engineering Contradiction:
Improvenumber of semiconductor elementsVSAvoidthermal life
Core Design Contradiction:
Quantity of substanceVSDuration of action of stationary object

Solution Approach 1:

By arranging semiconductor elements in a two-dimensional matrix rather than a one-dimensional line, the patent reduces the lateral length of the insulating substrate. This reduction in lateral length decreases the thermal stress experienced by the substrate during temperature changes, thereby preventing the remarkable shortening of thermal life that would otherwise occur with longer substrate configurations.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

3Quantity of substance

If the insulating substrate lateral length is increased to accommodate more semiconductor elements, then the rated current capacity increases, but the module shape becomes laterally long

Engineering Contradiction:
Improvenumber of semiconductor elementsVSAvoidmodule lateral shape
Core Design Contradiction:
Quantity of substanceVSShape

Solution Approach 1:

The patent employs a two-dimensional matrix arrangement of semiconductor elements on the insulating substrate, which optimizes the space utilization. This dimensional change enables the module to achieve the required rated current capacity with a more compact lateral footprint, preventing the module from becoming excessively long while maintaining all necessary functional elements.

Inventive Principle:
Principle #17Another dimension (Dimensionality change)

Data Source

PatentUS10361136B2Semiconductor device and semiconductor module provided with same
Publication Date: 2019.07.23 MITSUBISHI ELECTRIC CORP
  • US10361136B2 patent drawing
  • US10361136B2 patent drawing
  • US10361136B2 patent drawing

AI summary

It is an object of the present invention to provide a semiconductor device which allows an increase in the number of semiconductor elements mounted in parallel and prevents a shape of an insulating substrate onto which the semiconductor elements are mounted, from being laterally long, and provide a semiconductor module including such semiconductor device. A semiconductor device according to the present invention includes an insulating substrate, a metal pattern which is a continuous piece and is bonded to one main surface of the insulating substrate, and a plurality of switching elements which are bonded to a surface opposite to the insulating substrate on the metal pattern, and the plurality of switching elements are arranged in a matrix of two or more rows and two or more columns on the metal pattern.