Semiconductor Package Shielding Lateral Surface Design
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Solution Overview
Problem
The existing semiconductor package manufacturing process faces challenges in precisely controlling the depth of trenches for shielding layer formation, leading to either insufficient exposure of the redistribution layer or damage, and has a low production rate due to the large surface area coverage of the shielding layer.
Innovation Solution
A semiconductor package design where the shielding layer is disposed on the lateral surface of the semiconductor die, eliminating the need for trench formation in the encapsulant, and covering a smaller surface area, thereby increasing production efficiency and precision.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If a trench is formed through the encapsulant to expose the redistribution layer for shielding layer formation, then electromagnetic shielding effectiveness is improved, but the manufacturing precision requirement increases due to the need for precise trench depth control
Solution Approach 1:
The invention forms a protection layer on the semiconductor die before encapsulation, which serves as a pre-prepared surface for subsequent shielding layer formation. This preliminary action eliminates the need for post-encapsulation trenching and precise depth control, as the protection layer is already positioned correctly on the die surface before the encapsulant is formed.
Solution Approach 2:
Instead of forming the shielding layer by etching a trench through the encapsulant from the top (conventional approach), the invention inverts the sequence by forming the protection layer on the die surface before encapsulation, then forming the shielding layer on the lateral surface of the protection layer. This reverses the traditional top-down approach to a bottom-up approach, eliminating the need for precise trench depth control.
2Reliability
If the shielding layer covers the entire encapsulant surface, then electromagnetic shielding coverage is improved, but the production rate decreases due to the large surface area requiring processing
Solution Approach 1:
The invention applies the shielding layer locally only on the lateral surface of the protection layer, which corresponds to the semiconductor die area, rather than covering the entire encapsulant surface. This localized approach maintains electromagnetic shielding effectiveness where it is most needed (around the die) while significantly reducing the total surface area that requires shielding layer processing, thereby improving production rate.
3Reliability
If a trench is formed to expose the redistribution layer, then the shielding layer can be electrically connected to ground, but the device complexity increases due to additional process steps
Solution Approach 1:
The protection layer is formed on the semiconductor die before encapsulation, serving as a pre-prepared substrate for the shielding layer. This preliminary formation eliminates the need for subsequent trench etching and redistribution layer exposure steps, simplifying the overall process while maintaining the electrical connection pathway from the shielding layer through the redistribution layer to ground.
Data Source
AI summary
A semiconductor package includes a semiconductor die, a plurality of conductive bumps, a shielding layer, an encapsulant and a redistribution layer. The semiconductor die has an active surface, a backside surface and a lateral surface. The conductive bumps are disposed on the active surface of the semiconductor die. The shielding layer is disposed on the lateral surface of the semiconductor die. The encapsulant covers the shielding layer, and has a first surface and a second surface opposite to the first surface. The redistribution layer is disposed on the first surface of the encapsulant and electrically connected to the semiconductor die through the conductive bumps. The shielding layer is electrically connected to the redistribution layer.