Semiconductor Device with Embedded IPDs and Conductive Pillars
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Solution Overview
Problem
Semiconductor devices face challenges in efficiently interconnecting pre-fabricated Integrated Passive Devices (IPDs) with other active and passive devices, particularly in high-frequency applications, due to issues like electromagnetic interference (EMI) and complex manufacturing processes, which complicate integration and increase costs.
Innovation Solution
The semiconductor device employs conductive pillars to electrically interconnect pre-fabricated IPDs with other active and passive devices, using a self-aligned configuration with metal-insulator-metal capacitors and resistors, and encapsulates them with a discrete capacitor, providing effective EMI and RFI protection.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conductive through silicon vias (TSV) are used to interconnect IPDs, then electrical interconnection is achieved, but manufacturing cost increases and device integration is complicated
Solution Approach 1:
The patent divides the interconnection structure into multiple segments: a first conductive layer for IPD mounting, conductive pillars extending upward from this layer, and a second conductive layer at the top. This segmentation allows IPDs to be mounted on the first conductive layer while connections are established through the conductive pillars to the second conductive layer, avoiding the need for complex through-silicon via fabrication while achieving reliable electrical interconnection.
2Reliability
If conductive through silicon vias (TSV) are used to interconnect IPDs, then electrical interconnection is achieved, but manufacturing cost increases
Solution Approach 1:
The interconnection path is segmented into a first conductive layer, conductive pillars, and a second conductive layer. This segmentation enables the use of simpler, more cost-effective manufacturing processes compared to TSV fabrication, while still achieving reliable electrical interconnection between IPDs and other devices in the package.
3Reliability
If IPDs are integrated in high-frequency applications, then performance is improved, but electromagnetic interference (EMI) and radio frequency interference (RFI) increase
Solution Approach 1:
The patent introduces an encapsulant as an intermediary material that surrounds the conductive pillars and IPDs. This encapsulant acts as a barrier that contains and directs electromagnetic signals, reducing EMI and RFI while allowing the high-frequency performance benefits of integrated IPDs to be maintained.
4Ease of manufacture
If pre-fabricated IPDs are mounted to conductive layers, then manufacturing flexibility is improved, but electrical interconnection complexity increases
Solution Approach 1:
The patent segments the interconnection structure into a first conductive layer for IPD mounting, conductive pillars for vertical connection, and a second conductive layer for final interconnection. This segmentation simplifies the mounting process for pre-fabricated IPDs while maintaining manageable electrical interconnection complexity through the structured conductive path.
Data Source
AI summary
A semiconductor device includes a first conductive layer and conductive pillars disposed over the first conductive layer and directly contacting the first conductive layer. The semiconductor device includes an Integrated Passive Device (IPD) mounted to the first conductive layer such that the IPD is disposed between the conductive pillars. The IPD is self-aligned to the first conductive layer, and includes a metal-insulator-metal capacitor disposed over a first substrate and a wound conductive layer forming an inductor disposed over the first substrate. The semiconductor device includes a discrete capacitor mounted over the first conductive layer. The discrete capacitor is electrically connected to one of the conductive pillars. The semiconductor device includes an encapsulant disposed around the IPD, discrete capacitor, and conductive pillars, a first insulation layer disposed over the encapsulant and conductive pillars, and a second conductive layer disposed over the first insulating layer. The second conductive layer is electrically connected to the conductive pillars.