Semiconductor Device Front Surface Electrode Segmentation Warp Suppression
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Solution Overview
Problem
Semiconductor devices with soldered front and rear surface electrodes face issues of warping due to linear expansion coefficient differences and reduced temperature detection precision when the front surface electrode is divided in a single direction or independently of the temperature sensor's arrangement.
Innovation Solution
A semiconductor device design where the front surface electrode is divided into multiple pieces along at least two directions with a protective film in a separation region, with the temperature sensor placed only in the opposing region, reducing thermal resistance and preventing excessive temperature increases around the sensor.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Stability of the object's composition
If the front surface electrode is divided into multiple pieces along at least two directions, then the warp of the semiconductor device is suppressed, but the temperature sensor placement becomes more constrained
Solution Approach 1:
The front surface electrode is divided into multiple pieces along at least two directions, creating a grid-like segmentation pattern. This segmentation reduces the overall thermal expansion stress on the semiconductor substrate by distributing it across multiple smaller electrode segments, thereby suppressing warp while maintaining electrical connectivity through the divided structure.
Solution Approach 2:
The patent applies different configurations to different regions: the front surface electrode is divided into multiple pieces in most areas to suppress warp, while the temperature sensor is specifically placed in an undivided region to ensure accurate temperature detection. This local differentiation allows both warp suppression and precise temperature sensing to coexist.
2Reliability
If the temperature sensor is disposed in the intersection region, then the protective film coverage is maximized, but the temperature detection precision decreases due to excessive heat accumulation
Solution Approach 1:
The temperature sensor is extracted from the intersection region where heat accumulates excessively, and placed instead in an undivided region. This extraction removes the temperature sensor from the harmful thermal environment created by the concentrated protective film at the intersection, allowing accurate temperature detection while the protective film maintains its full coverage over the electrode structure.
Solution Approach 2:
The undivided region acts as an intermediary zone between the divided electrode regions and the temperature sensor. This intermediate area provides a thermal buffer that protects the temperature sensor from excessive heat accumulation while still allowing the protective film to cover the electrode structure effectively.
3Ease of manufacture
If the front surface electrode is divided in one direction only, then the manufacturing process is simplified, but the warp suppression is insufficient in the orthogonal direction
Solution Approach 1:
The electrode division is extended from a single direction into a two-dimensional grid pattern by dividing along at least two directions. This dimensional expansion transforms the warp suppression capability from one-dimensional to two-dimensional, effectively controlling warp in all directions on the semiconductor substrate surface while maintaining a relatively simple manufacturing process.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This configuration effectively suppresses warping and maintains high temperature detection precision by minimizing heat resistance and preventing excessive temperature readings around the temperature sensor.
Implementation Method 1
a heat resistance increase caused by a centralized placement of the protective film around the temperature sensor is suppressed, and the temperature can be suppressed from being excessively high around the temperature sensor
Implementation Method 2
the semiconductor device is warped due to a linear expansion coefficient difference between the semiconductor substrate and the electrodes
Data Source
AI summary
A semiconductor device includes: a semiconductor substrate having an element; a front surface electrode connected to the element; a rear surface electrode connected to the element; a protective film disposed on the front surface of the semiconductor substrate in a separation region; and a temperature sensor disposed on a front surface side of the semiconductor substrate. The front surface electrode is divided into multiple pieces along at least two directions with the protective film. The separation region includes an opposing region located between opposing sides of divided pieces of the front surface electrode adjacent to each other, and an intersection region, at which the opposing region intersects. The temperature sensor is disposed in only the opposing region.