Semiconductor Interposer with Integrated Passive Network
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Solution Overview
Problem
Conventional interposers in 3D semiconductor packaging lack integration of routing with complex features, limiting their ability to combine multiple chips effectively in a unified microchip configuration.
Innovation Solution
A semiconductor structure incorporating a substrate with conductive vias, a passive element network including resistors, capacitors, and inductors, and a redistribution layer that electrically connects these elements, enabling advanced interconnectivity and feature integration.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Adaptability or versatility
If conventional interposers are used to connect die to die or package to package, then basic electrical connection is achieved, but routing with complicated features cannot be combined
Solution Approach 1:
The patent merges multiple functions into a single integrated structure. The interposer substrate combines through-silicon vias (TSVs) for vertical electrical connection, passive element networks (resistors, capacitors, inductors) for signal conditioning, and redistribution layers for routing, all within one component. This allows basic connection plus advanced features to coexist in a unified structure, resolving the contradiction between versatility and complexity.
Solution Approach 2:
The interposer substrate is designed as a multi-functional component that performs multiple roles: electrical interconnection via TSVs, signal routing through redistribution layers, and signal conditioning through integrated passive elements. This universal design enables the same component to handle various functions that would otherwise require separate elements, enhancing adaptability while managing complexity through integration.
2Ease of manufacture
If simple interposer structure is used, then manufacturing is easier, but advanced interconnectivity and feature integration cannot be achieved
Solution Approach 1:
The interposer substrate is segmented into distinct functional layers: the substrate base with TSVs, the passive element network layer, and the redistribution layer. This segmentation allows each layer to be manufactured and optimized independently using standard semiconductor processes, then combined through established techniques like sintering and lamination, achieving advanced integration without sacrificing manufacturability.
Solution Approach 2:
The patent transitions from planar 2D routing to 3D vertical integration by incorporating TSVs that extend through the substrate thickness. This dimensional change enables electrical connections and passive elements to be arranged in three-dimensional space, allowing advanced interconnectivity while maintaining a compact footprint and utilizing standard 3D semiconductor manufacturing capabilities.
Data Source
AI summary
The present invention relates to a semiconductor structure having an integrated passive network and a method for making the same. The semiconductor structure includes a substrate which can be an interposer. The substrate can include a plurality of conductive vias. In various embodiments, the substrate includes a dielectric layer disposed thereon, the dielectric layer having an opening forming a straight hole allowing electrical connection between the passive network and the conductive via. The passive network includes a series of patterned dielectric and conductive layers, forming passive electronic components. In an embodiment, the passive device includes a common resistor coupled to a pair of inductors, each of the inductors coupled to a capacitor. In another embodiment, the passive device includes a resistor and an inductor electrically connected to each other, a bottom surface of the inductor coplanar with a bottom surface of the resistor.