Die Bonding Agent Viscosity Control for Semiconductor Reliability

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Solution Overview

Problem

Die bonding agents with high adhesion strength often suffer from delamination at the interface with substrates due to thermal expansion coefficient mismatches, leading to stress and cracks in semiconductor devices, and struggle to form fillets of specific size and shape required for downsizing and higher integration.

Innovation Solution

A die bonding agent comprising epoxy resin, a curing agent, and inorganic filler, with specific rheological properties, including a viscosity ratio of 1.5 to 4 at room temperature to 50°C and 0.5 to 1.5 at curing temperature, which allows for controlled fillet formation and reduced stress, enabling downsizing and high integration of semiconductor devices.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Strength

If a die bonding agent with high adhesion strength is used, then bonding strength is improved, but delamination occurs at the interface between the die bonding agent and substrate due to thermal expansion coefficient mismatch

Engineering Contradiction:
Improveadhesion strengthVSAvoidinterface stability
Core Design Contradiction:
StrengthVSReliability

Solution Approach 1:

The die bonding agent uses a composite formulation combining epoxy resin with specific inorganic fillers (such as silica or alumina) to create a material that maintains both high adhesion strength and thermal expansion compatibility. The inorganic fillers help match the thermal expansion coefficient with the substrate, preventing delamination while preserving bonding strength.

Inventive Principle:
Principle #40Composite materials

Solution Approach 2:

The invention modifies the rheological parameters of the die bonding agent by controlling viscosity ratios at different temperatures. The viscosity ratio at room temperature to 50°C is maintained at 1.5-4, and at curing temperature the ratio is 0.5-1.5, which optimizes both adhesion and stress distribution to prevent interface delamination.

Inventive Principle:
Principle #35Parameter changes

2Reliability

If a die bonding agent with large fillet size is used, then bonding reliability is improved, but device downsizing and higher integration are prevented

Engineering Contradiction:
Improvebonding reliabilityVSAvoiddevice size
Core Design Contradiction:
ReliabilityVSVolume of moving object

Solution Approach 1:

The invention precisely controls the rheological parameters of the die bonding agent, specifically the viscosity ratio at different temperatures. By maintaining viscosity ratio of 1.5-4 at room temperature to 50°C and 0.5-1.5 at curing temperature, the fillet forms with optimal size and shape that ensures bonding reliability while enabling device downsizing.

Inventive Principle:
Principle #35Parameter changes

3Shape

If a die bonding agent with high viscosity is used, then fillet shape control is improved, but fillet formation and stress distribution are compromised

Engineering Contradiction:
Improvefillet shape controlVSAvoidfillet integrity
Core Design Contradiction:
ShapeVSReliability

Solution Approach 1:

The invention uses temperature-dependent viscosity control through specific rheological parameters. The viscosity ratio at room temperature to 50°C is 1.5-4, allowing good shape control during application, while the viscosity ratio at curing temperature is 0.5-1.5, ensuring proper fillet formation and stress distribution during curing.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

The die bonding agent effectively prevents delamination and achieves the desired fillet shape and size, enhancing the reliability and integration of semiconductor devices by managing thermal stress and fluidity during bonding and curing processes.

Implementation Method 1

the die bonding agent having a viscosity ratio, V1/V2, ranging (i) from 1.5 to 4 at a temperature of from room temperature to 50° C., and (ii) from 0.5 to less than 1.5 at a temperature at which the die bonding agent hardens

Methodology Applied
Scientific EffectViscosity: Viscometer

Implementation Method 2

a die bonding agent comprising (A) an epoxy resin, (B) a curing agent, and (C) an inorganic filler

Methodology Applied
Scientific EffectCuring: Chemical Bonding

Implementation Method 3

in a device comprising a chip encapsulated with an encapsulant having liner expansion coefficient different from that of a die bonding agent, a large stress is generated at an interface between the die bonding agent and the encapsulant

Methodology Applied
Scientific EffectThermal expansion: Thermal Expansion

Data Source

PatentUS7901992B2Die bonding agent and a semiconductor device made by using the same
Publication Date: 2011.03.08 SHIN ETSU CHEMICAL CO LTD
  • US7901992B2 patent drawing
  • US7901992B2 patent drawing
  • US7901992B2 patent drawing

AI summary

A die bonding agent comprising (A) an epoxy resin, (B) a curing agent, and (C) an inorganic filler, the die bonding agent having a viscosity ratio, V1/V2, ranging(i) from 1.5 to 4 at a temperature of from room temperature to 50° C., and(ii) from 0.5 to less than 1.5 at a temperature at which the die bonding agent hardens in 0.5 hour to 1.5 hours, the viscosities being measured in 10 minutes after the die bonding agent is placed on a sample stage of a Brook Field viscometer, wherein V1 is a viscosity measured by stirring 0.5 ml of the die bonding agent with a No. 51 spindle at 0.5 rpm and V2 is a viscosity measured by stirring 0.5 ml of the die bonding agent with a No. 51 spindle at 5 rpm in the Brook Field viscometer.