Semiconductor/Solid-State Device Details TRIZ Cases

A stacked die semiconductor package uses an interposer to support vertically arranged dice with varying footprint areas.

A semiconductor wiring board integrates magnetic and carbon layers between conductive planes to manage high-frequency current distribution.

Radial splitters and combiners on glass substrates enable vertical stacking of power amplifier dice to reduce footprint and signal loss.

Graphene nanoplatelets disperse in a copper or aluminum matrix to boost thermal conductivity and mechanical strength.

A porous metal layer adheres to substrate regions with distinct surface characteristics, enabling precise structuring without masks.

Nested channel structures control particle stacking in thermal interfaces, reducing voiding and aging while maintaining low thermal resistance.

Segmented pillar design with circumferential trenches channels solder volume to eliminate short-circuits while shielding sidewalls from oxidation.

An upper insulating structure covers the conductive contact plug to prevent short circuits and dishing phenomena.

Replacing thick metal layers with conductive ceramic reduces thermal expansion stress and enables reliable operation above 400°C.

Vertical lamination of display module connection members prevents shorts from material elution while preserving compact device profiles.

A heat dissipating assembly uses a hermetically sealed chamber with region-specific thermal conductivities to manage heat in electronic devices.

A wafer level die package structure uses a packaged substrate with an opening to expose central pads and connect external terminals via metal wires.

Electrically conductive structures extend beyond the lateral edges of a thermally conductive dielectric sheet in a chip carrier design.

Segmented heat-transferring parts with high thermal conductivity dissipate heat from control and memory devices to reduce temperature in solid state drives.

Embedding a peaking inductor within a T-coil using stacked metallization resolves chip space inefficiencies while maintaining high quality factor.

A buried metal pad electrically isolated from the substrate enhances mechanical stability, reducing fracture risk in through-silicon via connections.

A conductive layer on the substrate lateral surface provides electromagnetic interference shielding without adding package volume.

Wide-band-gap elements at circuit board edges isolate silicon components from solder cracks.

Spacer-defined self-aligned vias resolve tight pitch alignment contradictions by eliminating separate registration steps and reducing capacitive coupling.

A semiconductor module mounting structure uses a substrate cavity to receive a heat dissipating member protruding portion for compact integration.

Color stitching regions connect signal lines over buried power rails, mitigating density gradient effects in advanced IC layouts.

Pre-applied NCF film cures under pressure to suppress voids in narrow electrode gaps.

Thermal compressive annealing applies heat and pressure to interdiffuse metal pads, resolving dielectric delamination caused by thermal expansion mismatches.

Embedding circuit layers inside the core layer reduces carrier board volume while maintaining complex signal routing capabilities.

High CTE polymer patterns on the interposer back surface offset thermal stress, preventing deformation of through-silicon via packages.

Dual redistribution layers on a silicon substrate connect via through silicon vias, eliminating the external package substrate to lower costs and improve yield.

A die bonding agent with temperature-dependent viscosity ratios controls fillet formation during semiconductor device assembly.

A dual-layer electromagnetic shield combines high permeability and high conductivity materials to attenuate interference across 1 MHz to 12 GHz.

Strengthening layers on dielectric surfaces prevent chip position shifting caused by uneven etching bottoms.

Differential opening spacing integrates high-voltage chips to reduce board space while maintaining insulation.

Co-extruding black master batch into polyimide layers eliminates separate coating steps, reducing reflectivity and manufacturing complexity.

Triarylamine moieties in conjugated polymers boost conductivity and efficiency for bright deep blue electroluminescence at low operating voltages.

Selectable subcircuits divert transient current to prevent gate oxide punch-through and junction damage in integrated circuits.

Nitridation creates a tungsten nitride barrier that prevents chemical penetration during wet cleaning, ensuring reliable electrical contact.

A failure prognostic package uses a weaker trace to signal impending hardware faults before total device breakdown.

A chip level EMI shielding structure uses a conformal ground layer on lateral walls to suppress electromagnetic interference without adding external components.

Field plate structure couples guard ring and channel stopper electrodes, preventing electric field concentration near the outermost guard ring.

Liner layer with dry etching selectivity forms contact holes of different depths, preventing short circuits and oxidation at the staircase tip.

Folded metal plates relieve magnetic flux concentration between electrodes, reducing self-inductance while maintaining creepage distance.

Silane-based protection layers buffer mechanical stress and block moisture absorption to preserve low-k dielectric integrity during wafer processing.