Semiconductor Memory Device Contact Plug Insulation
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Solution Overview
Problem
The existing three-dimensional semiconductor memory devices face challenges in improving operation reliability due to short circuits and dishing phenomena during the formation of conductive contact plugs, which affect the insulation distance and electrical characteristics.
Innovation Solution
The semiconductor memory device incorporates a conductive contact plug penetrating the source film, with a dummy stack body or upper insulating structure covering the plug to prevent short circuits and maintain insulation, ensuring reliable operation by increasing the insulation distance between the conductive contact plug and the cell stack body.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conductive contact plugs are formed in existing three-dimensional semiconductor memory devices, then electrical connection is achieved, but short circuits and dishing phenomena occur that reduce insulation distance and operational reliability
Solution Approach 1:
An upper insulating structure is introduced as an intermediary element between the conductive contact plug and the cell stack body. This insulating structure prevents direct contact and potential short circuits while maintaining the necessary electrical connections, thereby resolving the harmful effects without compromising device functionality
Solution Approach 2:
The solution adds a vertical dimension to the insulation strategy by forming an upper insulating structure that covers the conductive contact plug from above. This dimensional approach increases the insulation distance in the vertical direction, preventing short circuits that would occur in the horizontal plane
2Reliability
If insulation distance is increased to prevent short circuits, then operational reliability improves, but device structure becomes more complex
Solution Approach 1:
The upper insulating structure serves multiple functions simultaneously: it provides electrical insulation to prevent short circuits, maintains structural integrity of the device, and supports the cell stack body. This multi-functionality allows increased insulation distance without proportionally increasing device complexity
Data Source
AI summary
The present technology provides a semiconductor memory device. The semiconductor memory device includes a source film spaced from a substrate and disposed on the substrate, a conductive contact plug penetrating the source film, and a dummy stack body including dummy interlayer insulating films and sacrificial insulating films alternately stacked on the conductive contact plug.