Semiconductor Die Separation Using Backside Plasma-Etched Scribe Lines
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Solution Overview
Problem
Mechanical dicing techniques for semiconductor wafers face challenges in reducing scribe line width and substrate thickness while maintaining structural integrity, and laser or plasma dicing methods are hindered by metal layers in scribe line structures.
Innovation Solution
The method involves forming a sacrificial structure on the semiconductor substrate, depositing a metal layer, and using a plasma etch process with selective etchivity to expose and remove scribe lines, allowing for the separation of semiconductor dies without a blade or laser, and reducing substrate thickness and scribe line width.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If mechanical dicing techniques are used to separate semiconductor dies, then the dies can be separated, but the scribe line width and substrate thickness cannot be reduced sufficiently
Solution Approach 1:
The dicing process is segmented into multiple stages: first removing metal layers and scribe line structures, then separating dies. This allows scribe lines to be reduced to minimal width without compromising structural integrity during the dicing process itself.
Solution Approach 2:
Metal layers and scribe line structures are removed in advance before mechanical dicing. This preliminary action eliminates the need for wide scribe lines to accommodate blade passage, enabling thinner substrates and narrower scribe lines while maintaining structural integrity.
2Length of moving object
If laser or plasma dicing methods are used, then scribe line width can be reduced, but metal layers in scribe line structures hinder the process
Solution Approach 1:
Metal layers and scribe line structures are extracted and removed before the dicing process. This eliminates the interference that metal layers cause to laser or plasma dicing methods, allowing these advanced dicing techniques to be used effectively to achieve narrow scribe lines.
Solution Approach 2:
The metal layers and scribe line structures are removed in advance before applying laser or plasma dicing. This preliminary removal action enables the subsequent dicing process to proceed without interference from conductive metal materials.
3Area of stationary object
If scribe line width is reduced, then substrate area is optimized, but structural integrity during separation becomes compromised
Solution Approach 1:
The separation process is segmented into distinct stages: first removing supporting structures, then separating dies. This allows minimal scribe line width to be used for substrate area optimization while structural integrity is maintained through the staged process rather than relying on wide scribe lines.
Solution Approach 2:
Supporting structures and metal layers are removed in advance before die separation. This preliminary action eliminates the need for wide scribe lines to provide structural support during separation, enabling substrate area optimization with minimal scribe line width while maintaining integrity through process design.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the separation of semiconductor dies with reduced scribe line widths and substrate thickness, maintaining structural integrity and reducing electrical resistance, while avoiding modifications to scribe line structures and metal layers.
Implementation Method 1
applying a plasma etch process configured to remove the scribe region exposed
Data Source
AI summary
Methods of separating semiconductor dies are described. The method can separate individual semiconductor dies from a semiconductor wafer without using a blade. The methods include a plasma etch process utilizing metal structures formed on a back side of the wafer as masks to remove a portion of the semiconductor wafer from the back side. The portion removed by the plasma etch process corresponds to the scribe lines between the semiconductor dies. The plasma etch process terminates at a dielectric layer formed on a front side of the wafer. The dielectric layer may be severed to complete the separation process. Moreover, an ultrasonic water jet process may be utilized to remove burrs of the dielectric layer that has been severed.