Dielectric Composition for High-Frequency Film Components
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Solution Overview
Problem
Existing dielectric materials for high-frequency electronic components, such as diplexers and band-pass filters, face challenges in achieving high relative permittivity, low dielectric loss, and high breakdown voltage while being downsized, as materials like Ba(Mg1/3 Ta2/3)O3 struggle to maintain these properties when transitioned from sintered compacts to films.
Innovation Solution
A dielectric composition comprising a complex oxide represented by the formula xAO-yBO-zC2O5, where A includes Ba, Ca, or Sr, B is Mg, and C is Nb or Ta, with specific ratios of x, y, and z, is used to create a film with high relative permittivity, high Q value, and high breakdown voltage, suitable for downsized electronic components.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If Ba(Mg1/3 Ta2/3)O3 is used as a sintered compact to achieve low dielectric loss and high relative permittivity, then the Q value reaches 51000 and relative permittivity reaches 24.7, but the component size becomes too large for high-frequency electronic components
Solution Approach 1:
The invention changes the physical state parameter from sintered compact to film form, and optimizes the composition parameters (x, y, z ratios of AO, BO, C2O5) to achieve both high Q value and small size. The film formation process transforms the material into a thin-layer structure suitable for compact components.
Solution Approach 2:
The invention uses a composite oxide system combining AO (Ba, Ca, or Sr), BO (Mg), and C2O5 (Nb or Ta) in specific proportions to create a dielectric film that integrates the advantages of high permittivity and low loss while maintaining film-formability for downsized components.
2Volume of moving object
If Ba(Mg1/3 Ta2/3)O3 is formed as a film to downsize the component, then the component size is reduced, but the Q value becomes much lower than that of conventional sintered compacts
Solution Approach 1:
The invention optimizes the compositional parameters (x, y, z) of the complex oxide film to achieve high Q value. By adjusting the ratios of AO, BO, and C2O5 components and controlling the film formation and heat treatment parameters, the material achieves both film-formability and high quality factor.
Solution Approach 2:
The invention achieves different properties in different aspects of the same material: the film structure provides small size while the optimized composition and crystalline phase provide high Q value. The local optimization of composition ratios enables simultaneous achievement of compact size and high performance.
3Area of stationary object
If conventional dielectric materials are used to achieve high relative permittivity for downsizing, then the capacitor area is reduced, but the dielectric loss increases and Q value decreases
Solution Approach 1:
The invention employs a composite oxide system with specific composition ratios of AO, BO, and C2O5 that simultaneously provides high relative permittivity for capacitor miniaturization and low dielectric loss for high Q value performance.
Solution Approach 2:
The invention changes the material composition parameters to achieve a dielectric film with both high permittivity and low loss characteristics, resolving the trade-off between capacitor size reduction and quality factor maintenance.
4Volume of moving object
If the dielectric material is downsized to meet compact component requirements, then the component size is reduced, but the breakdown voltage decreases
Solution Approach 1:
The invention optimizes the compositional parameters (x, y, z) and heat treatment parameters of the dielectric film to achieve high breakdown voltage despite the reduced size. The specific ratio of AO, BO, and C2O5 components enhances the material's electrical strength.
Data Source
AI summary
A dielectric composition containing a complex oxide represented by the formula of xAO-yBO-zC2O5 as the main component, wherein A represents at least one element selected from the group including Ba, Ca and Sr, B represents Mg, and C represents at least one element selected from the group including Nb and Ta, and x, y and z meet the following conditions, x+y+z=1.000, 0.000<x≦0.281, 0.625≦y<1.000, and 0.000<z≦0.375.