Complex oxide film composition delivers high relative permittivity and low dielectric loss for downsized electronic components.
Through holes in nickel internal electrodes relieve interfacial stress to suppress peeling and cracking, enhancing manufacturing yield.
Adjacent non-overlapping pads reduce ESL and ESR while preventing contact defects from via dimples during board mounting.
Non-active internal electrodes extend to the capacitor boundary, creating permanent identification marks that survive firing and abrasive treatment.
Low-temperature sintering of a lead lanthanum zirconium titanate precursor yields a dense dielectric that maintains stability at high voltages.
A Bi-Zn-Nb-O dielectric composition delivers high quality factors and adjustable relative permittivity.
Segmented internal electrodes and a split layer suppress high-frequency noise while maintaining compact form factors.